Journal ArticleDOI
Violet luminescence of Mg‐doped GaN
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TLDR
The photoluminescent and electroluminescence properties of GaN-GaN:Mg diodes are described in this article, where the I −V characteristics showed I ∞ V3 in the region where light was emitted, and the observed power efficiency was approximately 10−5.Abstract:
The photoluminescent and electroluminescent properties of GaN–GaN:Mg diodes are described. Visible violet electroluminescence was observed with excitation voltages of 10–20 V with the emission peak in the region of 2.9 eV. The I‐V characteristics showed I ∞ V3 in the region where light was emitted, and the observed power efficiency was approximately 10−5. A photoluminescence peak at 2.9 eV provided additional evidence for an acceptor level, associated with the Mg impurity, about 0.5 eV above the valence band.read more
Citations
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Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
Mechanism of Yellow Luminescence in GaN
Toshio Ogino,Masaharu Aoki +1 more
TL;DR: The mechanism of the yellow luminescence in GaN has been studied in this paper, where it is observed in microcrystals synthesized from Ga and NH3 by direct reaction, but is not observed in needlelike crystals grown by sublimation-recrystallization.
Patent
Solid state white light emitter and display using same
TL;DR: In this paper, a light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid-state device to emit from the device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to the radiation, is presented.
Patent
Double heterojunction light emitting diode with gallium nitride active layer
John A. Edmond,Hua-Shuang Kong +1 more
TL;DR: In this paper, a double heterostructure for a light emitting diode consisting of a layer of aluminum gallium nitride having the first conductivity type, a layer with the opposite conductivities, and an active layer of gallium-nitride between the two layers is presented.
Journal ArticleDOI
Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
S. Yoshida,S. Misawa,S. Gonda +2 more
TL;DR: In this paper, the electrical and luminescent properties of GaN epitaxial films grown on AlN•coated sapphire by reactive molecular beam epitaxy have been studied.
References
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Journal ArticleDOI
The preparation and properties of vapor- deposited single-crystalline GaN
H. P. Maruska,J. J. Tietjen +1 more
TL;DR: Vapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc as mentioned in this paper, were tested for testing the properties of single crystals.
Journal ArticleDOI
Luminescence of Zn‐ and Cd‐doped GaN
TL;DR: In this paper, the luminescence of epitaxial GaN layers doped with Zn or Cd during growth is characterized, at low doping levels, by the presence of an I1-type line at 3.455 eV at 4.2 K which is attributed to the decay of excitons bound to neutral [inverted lazy s] 190 −meV deep Zn/Cd acceptors on Ga sites.
Journal ArticleDOI
Electroluminescence in GaN
TL;DR: A light-emitting diodes of GaN have been made, which can generate CW light over any portion of the visible spectrum and in the near ultraviolet, and external power efficiencies of the order of 10−4 can be obtained at room temperature as mentioned in this paper.
Journal ArticleDOI
GaN blue light-emitting diodes
TL;DR: In this paper, blue electroluminescence is obtained at room temperature from avalanche breakdown at i-n transitions produced in GaN grown from the vapor phase, which is obtained from GaN growing from the gas phase.