Journal ArticleDOI
Weak-Field Magnetoresistance and the Valence-Band Structure of SnTe
R. S. Allgaier,Bland Houston +1 more
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TLDR
In this article, a Fermi-surface model is described which can account for weak-field magnetoresistance measurements and reconcile them with several other kinds of experimental measurements on SnTe.Abstract:
Weak-field magnetoresistance measurements on $p$-type SnTe exhibit a peculiar symmetry which is temperature and carrier-concentration dependent. A Fermi-surface model is described which can account for these results and reconcile them with several other kinds of experimental measurements on SnTe. The Fermi surface consists of four prolate $〈111〉$ valleys with three $〈100〉$-oriented knobs protruding from each end of each valley. The proposed model is also used to bring out some previously unreported similarities between the band structures of the ${\mathrm{Pb}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}\mathrm{Te}$ and ${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$ systems, and to examine the broader question of the connection between weak-field magnetoresistance behavior and band-structure characteristics.read more
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Experimental realization of a topological crystalline insulator in SnTe
Yukio Tanaka,Zhi Ren,Takafumi Sato,Kosuke Nakayama,Seigo Souma,Takashi Takahashi,Kouji Segawa,Yoichi Ando +7 more
TL;DR: A topological crystalline insulator has surface metallic states that are topologically protected by time-reversal symmetry as discussed by the authors, where the surface metallic state is instead protected by the mirror symmetry of the crystal.
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Recent progress towards high performance of tin chalcogenide thermoelectric materials
TL;DR: In this paper, the authors present the progress in SnTe, SnSe, and SnS, mainly discussing the effective tuning of the electron and phonon transport based on the intrinsic properties, along with the challenges for further optimization and applications.
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THERMOPOWER OF SnTe FROM BOLTZMANN TRANSPORT CALCULATIONS
TL;DR: In this paper, the doping and temperature dependent thermopower of SnTe is calculated from the first principles band structure using Boltzmann transport theory, and it is shown that the p-type thermoptimal is inferior to PbTe consistent with experimental observations, but that the n-type is substantially more favorable.
Journal ArticleDOI
From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films
Thaneshwor P. Kaloni,Kai Chang,Kai Chang,Brandon J. Miller,Qi-Kun Xue,Xi Chen,Shuai-Hua Ji,Stuart S. P. Parkin,Salvador Barraza-Lopez +8 more
TL;DR: In this paper, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 atomic layers (ALs) were examined on freestanding samples, to which atomic layers were gradually added.
Journal ArticleDOI
Thermopower of SnTe from Boltzmann Transport Calculations
TL;DR: In this article, the doping and temperature dependent thermopower of SnTe was calculated from the first principles band structure using Boltzmann transport theory, and it was shown that the $p$-type SnTe is inferior to PbTe consistent with experimental observations.