Write Variation Aware Buffer Assignment for Improved Lifetime of Non-Volatile Buffers in On-Chip Interconnects

TLDR: This paper attempts to reduce static power consumption by using non-volatile memory technology-based spin-transfer torque random access memory (STT-RAM) buffers to reduce write variation to almost 0% and improve lifetime by 3.3 and 19.9 times for intra-VNet and inter-V net, respectively.

Abstract: With multiple cores integrated on the same die, communication across cores is managed by on-chip interconnect called network-on-chip (NoC). Power and performance of these interconnect is a significant factor as the communication network consumes a considerable share of the power budget. In particular, the buffers used at every port of the NoC router consume considerable dynamic as well as static power. This paper attempts to reduce static power consumption by using non-volatile memory technology-based spin-transfer torque random access memory (STT-RAM) buffers. STT-RAM technology has the advantage of high density and low leakage but suffers from weaker write endurance. This impacts the lifetime of the router as a whole. The buffers in a router are allocated to virtual networks (VNets) and in-turn to virtual channels (VCs) within each VNet. To reduce uneven writes across the buffers, we propose policies to reduce intra-VNet write variation and inter-VNet write variation. The former performs write variation aware VC allocation in each VNet, and the latter does write variation aware buffer assignments to each VNet. Experimental evaluation on full system simulator shows that proposed policies reduce write variation to almost 0% and improve lifetime by 3.3 and 19.9 times for intra-VNet and inter-VNet, respectively. We also get significant gains in the energy delay product.