Journal ArticleDOI
X‐ray lithography
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In this article, the authors proposed x-ray lithography with wavelengths between 0.2 and 5 nm for semiconductor production, which can achieve high-structural resolution as good as 0.1 μm and a wide scope of advantages for the application in circuit production.Abstract:
X‐ray lithography with wavelengths between 0.2 and 5 nm provides both high‐structural resolution as good as 0.1 μm and a wide scope of advantages for the application in circuit production. Examples for this better process performance compared to optical techniques are: lower particle and dust sensitivity, applicability of simple single‐layer resist technique, high depth of focus without any influence of substrate material and chip topography, and presumably, the highest throughput of all lithography methods which are able to go into the submicron range. However, the introduction of x‐ray lithography into the semiconductor production means a revolutionary change of production technology. This begins with a completely different mask technology which makes, for example, the classical separation of mask substrate fabrication from pattern generation by different manufacturers very problematical and ends with the necessity to introduce x‐ray lithography in relatively large production capacity units consisting of a larger number of x‐ray steppers. The latter is caused by the fact that a storage ring—even in the smallest version, e.g., COSY (Kompakt Speicherring fur Synchrotronstrahlung)—has to supply up to 10 x‐ray steppers with light in order to clearly beat the optical techniques with respect to throughput and lower cost level. To prove such statements in pilot production lines, the necessary tools and components for x‐ray lithography are already or will be available for the first time on a commercial basis in the very near future. Especially steppers, sources, and resists with satisfying specifications have been announced by a growing number of vendors. The most critical problem at present is the mask technology and the tools for defect elimination. However, with the existing technologies, the requirements for 0.5‐μm‐design rules will be met very soon on a pilot scale.read more
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Journal ArticleDOI
Biomedical microfluidic devices by using low-cost fabrication techniques: A review.
Vera Faustino,Vera Faustino,Susana Oliveira Catarino,Susana Oliveira Catarino,Rui Lima,Graça Minas +5 more
TL;DR: In this review, a selection of the most recent lithographic and non-lithographic low-cost techniques to fabricate microfluidic structures, focused on the features and limitations of each technique.
Journal ArticleDOI
Droplet target for low-debris laser-plasma soft X-ray generation
Lars Rymell,Hans M. Hertz +1 more
TL;DR: In this article, a water window (λ = 2.3-4.4 nm) laser-plasma X-ray source which uses ethanol droplets as target is described.
Journal ArticleDOI
Evolution of the MOS transistor-from conception to VLSI
TL;DR: In this article, the authors reviewed the development of the metal-oxide-semiconductor field effect transistor (MOSFET) during the last 60 years, from the 1928 patent disclosures of the field effect conductivity modulation concept and the semiconductor triode structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which led to the laboratory demonstration of the modern silicon.
Book ChapterDOI
Defect Related Luminescence in Silicon Dioxide Network: A Review
Abstract: The discovery of strong luminescence at room temperature from silicon cluster has attracted an enormous attention in recent years due to its potential applications in Si-based optoelectronic devices, especially blue and UV luminescence devices. Several studies have addressed the question of augmentation and stabilization of luminescence emission with different treatments, such as electron irradiation, thermal treatments and ion implantations. Even though observed visible light can be explained by the quantum confinement (QC) effect, many experimental results obey to the QC model supported surface state. Theoretically, the effects of quantum confinement on band gap of silicon indicate that it should be possible to obtain a blue light or shorter wavelength photons from the porous silicon if the silicon crystal size can be reduced to a certain value, e.g. to the diameter of 2-5 nm. However, it is rather difficult in practice to obtain a blue/white luminescence even when nanocrystals with diameters smaller than 2.0 nm are present. Some authors attributed this difficulty to the formation of surface Si–O bonds, which lead to mid-band gap trapped electrons and hole exciton states and thereby remove the dependency of the luminescence on cluster size. But in this case a luminescence emission was obtained in the red and yellow regions. It was found that some post-treatments such as anodic oxidation and oxidation in air could reduce the effective size of the Si nanocrystallites, thus causing a blue shift of the luminescence spectrum. If the red-yellow emission of the PS could be combined with a blue/green emission by modification of the PS surface such as oxidation or metal coating, it would be possible to obtain white light. This would mean an economical route to silicon based LEDs. Silicon dioxide, SiO2, is widely distributed in the environment, and is present in the form of sand on all beaches and deserts. It is the starting material for the production of silicate glasses and ceramics. It may occur in crystalline or amorphous form, and is found naturally in impure forms such as sandstone, silica sand or quartz. Its specific gravity and melting point depend on the crystalline structure. Silica is known to occur in many crystalline phases or modes (┙-quartz, ┚-quartz, ┙-cristobalite, ┚-cristobalite, ┙-tridymite, ┚tridymite, ┛-tridymite, coesite, melanophlogopite, keatite, fasriges, stishovite, chalcedon, agate, moganite, and others) besides some amorphous phases (opal, hyalite, sintered pearl, lechateierite, natural silica glass) [Fanderlik 1991]. Silicon dioxide is not only one of the most abundant materials on earth as mentioned, but also a critical material component of considerable technological importance. Today's modern electronics greatly depends on silicon dioxide for the manufacture of semiconductors and microelectronic devices, besides
Journal ArticleDOI
Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films
TL;DR: In this paper, the authors studied the stress evolution of plasma enhanced chemical vapor deposition a•SiC:H films by increasing the annealing temperature from 300 to 850°C.