Journal ArticleDOI
X-valley influence on hot free electron absorption and optical nonlinearities at 10.6 µm in highly doped n-GaAs
TLDR
In this paper, the influence of the presence of the X-valley in highly doped n-GaAs on hot free-electron absorption and optical nonlinearities at 10.6μ m wavelength is discussed.Abstract:
A theoretical overview is given about the influence of the presence of the X-valley in highly doped n -GaAs on hot free-electron absorption and optical nonlinearities at 10.6 μ m wavelength. The implications of the extension of the quantum-mechanical model from two to three valleys are discussed. For electron temperatures above 600 K the X-valley presence starts to be observed. We reveal that it is difficult to trace the individual contributions of different X-electron related inter- and intravalley absorption and relaxation phenomena and therefore we suggest to introduce an effective X-valley related deformation potential which is a weighted combination of all the X-valley contributions. We discuss how nonlinear optical experiments can be conducted to determine the LL-intervalley and this effective X-valley deformation potential.read more
Citations
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Journal ArticleDOI
Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon-plasmon coupling regime
TL;DR: In this article, the free-carrier absorption coefficient for polar III-V semiconductors with strong LO phonon-plasmon interaction was calculated for different mid-IR wavelengths and doping concentrations.
Journal ArticleDOI
Calculated temperature rise in midinfrared laser irradiated Hg0.72Cd0.28Te
TL;DR: In this article, the authors present results from a numerical study on heating in a 10μm thick layer of Hg0.72Cd0.28Te induced by 1μs long laser pulses at photon energies close to the band gap of the material.
Journal ArticleDOI
The relationship between reflectivity minima and eigenmodes in multi-layer structures
TL;DR: In this paper, the authors developed a calculation procedure based on a pole-zero representation for determining, for each eigenmode compatible with the field distribution of the incident plane wave, its contribution to the amplitude and phase of the reflectivity.
Journal ArticleDOI
CO2 laser induced temperature profiles in n-GaAs: An analytical model probed with the Seebeck effect
TL;DR: In this paper, an analytic model describing the distribution of the electron temperature created by absorption of an optical beam with a cylindrical symmetry in a layered structure was developed, and the contribution of the lattice heating in the stationary and nonstationary regimes was paid to the contribution.
Proceedings ArticleDOI
IR laser induced heating in Hg0.72Cd0.28Te
TL;DR: In this article, the authors present results from a numerical study on heating in Hg 072 Cd 028 Te induced by 42 μm laser pulses in the μs regime.
References
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Journal ArticleDOI
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
TL;DR: In this article, a review of the properties of the Al x Ga1−x As/GaAs heterostructure system is presented, which can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4), lattice dynamic properties, (5) lattices thermal properties,(6) electronic-band structure, (7) external perturbation effects on the bandgap energy, (8) effective mass, (9) deformation potential, (10) static and
Journal ArticleDOI
Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Journal ArticleDOI
Velocity‐field characteristics of GaAs with Γc6‐Lc6‐Xc6 conduction‐band ordering
TL;DR: In this article, Monte Carlo calculations of velocity-field characteristics for GaAs using the recent experimental conduction-band ordering of Aspnes, which places the Lc6(111) conduction−band minima lower in energy than the Xc6 (100) minima.
Journal ArticleDOI
Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy.
TL;DR: The importance of electron-electron scattering and inadequacy of a simple phonon-cascade model, even at a density as low as 5, is shown, and the electrons returning to the L act as a source of heating for the photoexcited plasma.
Journal ArticleDOI
Femtosecond intervalley scattering in GaAs
P. C. Becker,Hugo L. Fragnito,C. H. Brito Cruz,Jagdeep Shah,Richard L. Fork,J. E. Cunningham,Jaymie Henry,Charles V. Shank +7 more
TL;DR: In this article, the authors reported the measurement of intervalley scattering rates for optically excited carriers in GaAs using optical pulses of 6 fs duration and an energy distribution centered at 2.0 eV.