Z
Zetian Mi
Researcher at University of Michigan
Publications - 439
Citations - 14776
Zetian Mi is an academic researcher from University of Michigan. The author has contributed to research in topics: Nanowire & Light-emitting diode. The author has an hindex of 61, co-authored 380 publications receiving 11491 citations. Previous affiliations of Zetian Mi include Dalian Maritime University & McGill University.
Papers
More filters
Journal ArticleDOI
Wafer-level photocatalytic water splitting on gan nanowire arrays grown by molecular beam epitaxy
Defa Wang,Adrien Pierre,Golam Kibria,Kai Cui,X. Han,Kirk H. Bevan,Kirk H. Bevan,Hong Guo,Suzanne Paradis,Abou Rachid Hakima,Zetian Mi +10 more
TL;DR: The decomposition of pure water into H( 2) and O(2) by GaN nanowires is confirmed to be a highly stable photocatalytic process, with the turnover number per unit time well exceeding the value of any previously reported GaN powder samples.
Journal ArticleDOI
Visible light-driven efficient overall water splitting using p -type metal-nitride nanowire arrays
M. G. Kibria,Faqrul A. Chowdhury,Songrui Zhao,Bandar Alotaibi,Michel L. Trudeau,Hong Guo,Zetian Mi +6 more
TL;DR: It is shown that efficient and stable stoichiometric dissociation of water into hydrogen and oxygen can be achieved under visible light by eradicating the potential barrier on nonpolar surfaces of indium gallium nitride nanowires through controlled p-type dopant incorporation.
Journal ArticleDOI
p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).
Hieu Pham Trung Nguyen,Shaofei Zhang,Kai Cui,X. Han,Saeed Fathololoumi,Martin Couillard,Gianluigi A. Botton,Zetian Mi +7 more
TL;DR: With the use of p-type modulation doping in the dot-in-a-wire heterostructures, this work has demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2).
Journal ArticleDOI
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
TL;DR: It is reported that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (∼320-340 nm) at low temperatures.
Journal ArticleDOI
The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
Sasan Fathpour,Zetian Mi,P. K. Bhattacharya,A. R. Kovsh,S. S. Mikhrin,Igor Krestnikov,A. V. Kozhukhov,N. N. Ledentsov +7 more
TL;DR: In this paper, a self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped laser and to analyze the measured data.