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Area of 128 bit shift register using cmos 


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The area of a 128-bit shift register using CMOS technology varies depending on the design approach. Different studies have proposed efficient shift register designs with varying areas. For instance, a 128-bit shift register utilizing pulsed latches in a 65nm CMOS process occupied less area compared to traditional flip-flop-based designs . Similarly, a 128-bit unidirectional thermometer-code shift register in a 65nm CMOS process occupied 167μm², while a bidirectional version occupied 226μm², showcasing area reductions of 71% and 76% respectively compared to conventional designs . These examples highlight the potential for compact shift register implementations using innovative CMOS-based approaches.

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The paper discusses a 2 Gb/s GaAs 128-bit shift register using standard cells with 0.5 μm WN/sub x/ gate MESFETs, but it does not address the area of the shift register using CMOS technology.
The 128-bit shift register using pulsed latches in a 65nm CMOS process with VDD = 1.0V saves area and power compared to a flip-flop-based register.
Not addressed in the paper.
Not addressed in the paper.

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