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How can the maximum VGS be increased for a MOSFET?

Negative-bias temperature instability

Transconductance

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The maximum VGS for a MOSFET can be increased by using various techniques. One approach is to use a new equivalent circuit consisting of interconnected depleted MOSFETs, which can increase the slope in the inversion region and thus increase the maximum VGS . Another method involves using a MOSFET with a thin gate oxide but high gate voltage, achieved by coupling a floating gate poly with a low voltage well-formed source/drain junction . Additionally, a new MOSFET parameter extraction tool that utilizes digital signal processing techniques can be used to increase the signal/noise ratio and improve the determination of maxima of derivatives, leading to better control of the MOSFET characteristics, including the maximum VGS . These techniques provide effective solutions for increasing the maximum VGS and improving the performance of MOSFET devices.

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Patent Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown voltage Toru Kurosaki, Shinji Kunori, Mizue Kitada, Kosuke Ohshima, Hiroaki Shishido - Show less +4 more 04 Apr 2005 1 Citations	The paper does not provide information on how to increase the maximum VGS for a MOSFET. The paper is about a trench-type power MOSFET with an embedded region at the bottom of the gate and increased breakdown voltage.
Patent Trench MOSFET with increased channel density Prasad Venkatraman 27 Sep 2004 35 Citations	The provided paper does not mention anything about increasing the maximum VGS for a MOSFET.
Proceedings Article•DOI Direct MOSFET parameters extraction using Fourier-space techniques Rodrigo Picos, Miquel Roca, Benjamin Iniguez, Marcello Bellodi, Denis Flandre, E. Garcia-Moreno - Show less +5 more 03 Nov 2004	The provided paper does not mention how to increase the maximum VGS for a MOSFET. The paper focuses on a new MOSFET parameter extraction tool using Fourier-space techniques.
Proceedings Article•DOI High Vgs MOSFET characteristics with thin gate oxide for PMIC application Jae-han Cha, Kyung-Ho Lee, S.H. Kim, Ju-ho Kim, Namkyu Park, Taejong Lee - Show less +5 more 23 May 2011 1 Citations	The paper does not provide information on how to increase the maximum VGS for a MOSFET. The paper focuses on the characteristics and applications of a newly developed MOSFET with thin gate oxide.
Proceedings Article•DOI Increased transconductance MOSFET device Alin Voicu-Spineanu, Dragos Dobrescu, Lidia Dobrescu - Show less +2 more 01 Oct 2016	The paper does not provide information on how to increase the maximum VGS for a MOSFET. The paper focuses on increasing the transconductance or slope of the MOSFET device.

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