How to limit ESD damage in microchips?
To limit ESD damage in microchips, various strategies and protection techniques can be employed. One approach is the use of on-chip ESD protection circuitry, which is included in most modern ICs . These protection circuits help prevent damage caused by static charge accumulation during transport and handling. Another method is the implementation of "clamp cells" that redirect excessive current through an ESD network and clamp the voltage to a low level . Additionally, the use of high-voltage silicon-controlled rectifiers (SCRs) and silicon carbide (SiC)-based HV-SCRs can provide robust ESD protection . These devices are designed to handle high levels of current and voltage, effectively protecting the microchips from ESD events. It is also important to consider chip architecture, circuit design, and semiconductor process technology when designing ESD protection circuits .
Answers from top 5 papers
Papers (5) | Insight |
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19 Apr 2015 1 Citations | The paper discusses the use of modified Field Drift MOSFET Silicon Controlled Rectifier (m-FDNSCR) to enhance ESD protection in microchips. |
The paper discusses the use of "clamp cells" to protect microchips from ESD damage by redirecting excessive current and clamping the voltage to a low level. | |
The provided paper discusses the use of an on-chip ESD sensor to identify and prevent the assembly of ESD compromised dielets in advanced packaging technologies. It does not provide specific methods for limiting ESD damage in microchips. | |
The paper discusses the importance of built-in protection circuits in ICs to prevent damage from Electrostatic Discharge (ESD) events. It does not provide specific methods to limit ESD damage in microchips. | |
The provided paper is about a silicon carbide (SiC)-based high-voltage silicon-controlled rectifier (HV-SCR) for on-chip electrostatic discharge (ESD) protection. It does not provide information on how to limit ESD damage in microchips. |