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What are the effects of oxygen point defects in AlN? 


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Oxygen point defects in AlN have several effects. First, the presence of oxygen impurities can significantly impact the anisotropy, thermal conductivity, and optical properties of AlN . Additionally, the internal quantum efficiency (IQE) of AlGaN multiple quantum wells (MQWs) is influenced by the density of point defects, including oxygen impurities . High-temperature annealing of AlN films can lead to an increase in oxygen impurity concentration, resulting in the evolution of point defects and enhanced near-ultraviolet defect peaks . Furthermore, oxygen defects in metallic TiN and semiconducting rock salt-(Al,Sc)N prefer to be in the form of substitutional and interstitial oxygen complexes, which can affect the thermionic properties of epitaxial metal/semiconductor superlattices . Overall, oxygen point defects in AlN can have significant implications for the mechanical, thermal, optical, and electrical properties of the material.

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The effects of oxygen point defects in AlN include the increase in near-ultraviolet emission and the limitation of its application in deep ultraviolet optoelectronic devices.
The effects of oxygen point defects in AlN are not mentioned in the provided paper.
Answer: The effects of oxygen point defects in AlN are not mentioned in the provided paper.
The effects of oxygen point defects in AlN are not mentioned in the provided paper.
The paper mentions that oxygen impurities in AlN have a relatively large effect on the thermal conductivity and optical properties of AlN.

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