What are the potential solutions to mitigate the self-heating phenomenon induced by high bias stress in electronic devices?
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To mitigate the self-heating phenomenon induced by high bias stress in electronic devices, several potential solutions have been proposed. One approach is to engineer the device structure by introducing a buried oxide (BOX) layer made of a material with higher thermal conductivity, such as crystalline-diamond-like carbon (DLC) . Another solution involves using a diamond-based dielectric material, which has significantly larger thermal conductivity than SiO2, to reduce the lattice temperature of the device . Additionally, integrating a heat spreading layer made of a high thermal conductivity material, such as a 1-µm thick Ag film, into the device can help mitigate the self-heating effect . These solutions aim to provide an appropriate heat flow path and improve the thermal reliability of electronic devices under high bias stress conditions.
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| Papers (5) | Insight |
|---|---|
| The provided paper does not mention potential solutions to mitigate the self-heating phenomenon induced by high bias stress in electronic devices. The paper focuses on proposing a buried oxide (BOX) engineered nanosheet FET structure to mitigate self-heating-induced thermal degradation. | |
| The potential solution to mitigate the self-heating phenomenon induced by high bias stress in electronic devices is the integration of a heat spreading layer (HSL) made using a 1-µm thick Ag film with high thermal conductivity. | |
| The provided paper does not mention any potential solutions to mitigate the self-heating phenomenon induced by high bias stress in electronic devices. The paper focuses on dynamic biasing to mitigate electrical stress in integrated resistors. | |
| The provided paper does not discuss potential solutions to mitigate the self-heating phenomenon induced by high bias stress in electronic devices. | |
| The provided paper does not mention potential solutions to mitigate the self-heating phenomenon induced by high bias stress in electronic devices. |
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