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What is influence of hydrogen annealing on indium tin oxide film?

Electrical resistivity and conductivity

Thin-film transistor

High-power impulse magnetron sputtering

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Hydrogen annealing significantly impacts the properties of indium tin oxide (ITO) films. Research shows that annealing ITO films in hydrogen-containing forming gas can reduce film resistivity by nearly an order of magnitude, enhancing carrier concentration and mobility . Additionally, hydrogen annealing in forming gas can lead to the reduction of oxygen-related species like oxygen vacancies and hydroxyl/carbonate groups in the film, affecting the electrical performance of the film . Moreover, the incorporation of hydrogen during sputtering and subsequent annealing can result in the formation of V Sn -H complexes in tin dioxide films, increasing hole concentration and mobility while improving transmittance . These findings highlight the significant role of hydrogen annealing in modifying the properties of ITO and related oxide films.

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Journal Article•DOI Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering Rostislav Velichko, Yusaku Magari, Hisao Makino, Mamoru Furuta - Show less +3 more 30 Apr 2021-Japanese Journal of Applied Physics	Not addressed in the paper.
Journal Article•DOI Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors Kyum Jung Lee, Lae-Young Jung, Hyunsang Hwang - Show less +2 more 15 Aug 2022-Applied Physics Letters	Not addressed in the paper.
Open access•Journal Article•DOI Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range Ming-Jie Zhao, Jin-Fa Zhang, Jie Huang, Zuo-Zhu Chen, An Xie, Wan Yu Wu, Chien Jung Huang, Dong-Sing Wuu, Shui-Yang Lien, Wen-Zhang Zhu - Show less +9 more 01 Jun 2022-Nanomaterials	Hydrogen annealing in a large temperature range enhances carrier concentration and mobility in indium tin oxide films, reducing resistivity significantly and inducing the formation of metallic clusters.
Journal Article•DOI The influence of annealing atmosphere on sputtered indium oxide thin-film transistors Na Xiao, Saravanan Yuvaraja, Dhanu Chettri, Zhiyuan Liu, Yi Lu, Che-Hao Liao, Xiao Tang, Xiaohang Li - Show less +7 more 12 Jul 2023	Hydrogen annealing (forming gas) enhances field-effect mobility and threshold voltage shift in sputtered indium oxide thin-film transistors, affecting oxygen-related species and improving TFT performance.
Open access•Journal Article•DOI Annealing Effects on SnO2 Thin Film for H2 Gas Sensing Yijun Yang, Bo Mi Maeng, Dong Geon Jung, Junyeop Lee, Y. Kim, J. B. Kwon, Hee Kyung An, Daewoong Jung - Show less +7 more 01 Sep 2022-Nanomaterials 8 Citations	Not addressed in the paper.

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