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Which applications would benefit from 1200 V GaN transistors? 


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1200V GaN transistors offer significant advantages for various applications. They are ideal for high-voltage power applications such as electric cars, data center UPS systems, and power converters due to their high efficiency and reliability . The use of GaN-on-sapphire technology enables fast-switching, low-loss devices with excellent performance metrics, making them competitive in the 1200V power device market . Additionally, the epitaxial growth of GaN buffer structures on engineered poly-AlN substrates qualified for 1200V applications opens doors to high-voltage GaN-based power applications, further expanding their potential in various industries. Overall, the applications that stand to benefit the most from 1200V GaN transistors include electric vehicles, data centers, and power conversion systems, where efficiency, reliability, and high performance are crucial.

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High-voltage power applications would benefit from 1200 V GaN transistors due to their high performance, low on-resistance, high breakdown voltage, and ability to operate at high temperatures.
1200V GaN transistors on sapphire substrates are beneficial for electric vehicle (EV) and industrial applications due to their high performance, low loss, and fast-switching capabilities.
1200V GaN transistors benefit high-power applications like synchronous boost converters, offering >99% peak efficiency, surpassing SiC MOSFETs, and excelling in 1200V applications.
Electric cars and high voltage power applications would benefit from 1200 V GaN transistors due to the epitaxial buffer structure's high breakdown voltage on 200 mm engineered substrates.
Proceedings ArticleDOI
22 May 2022
2 Citations
1200V GaN transistors on sapphire substrates are beneficial for high-power applications like efficient buck converters due to their fast-switching, low loss, and high voltage capabilities.

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