Showing papers on "Focused ion beam published in 1974"
[...]
TL;DR: In this article, the authors present a review of the advances in understanding the basic processes of ion beam systems with the objective of indicating the advances that are important for ion beam applications.
Abstract: In recent years the requirements for higher current ion beams have increased notably in a wide area of applications. To meet these requirements it has been necessary to develop better understanding of the three main components of ion beam systems, namely the plasma source in which ions of the species needed can be produced at controlled rates with spatial and temporal uniformity, the extraction electrode systems for formation of low divergence and low emittance ion beams, and the transport of the ion beams in the presence of possible high space charge forces. In this review developments in these areas are discussed with the objective of indicating the advances in understanding the basic processes which are important.
87 citations
TL;DR: In this paper, a focused high-energy ion beam is used to create high-resolution patterns of implantation doping, damage in crystal structures, or other chemical change such as molecular bond breaking.
Abstract: Microfabrication techniques are being investigated in which a focused high‐energy ion beam bombards a surface to create high‐resolution patterns of implantation doping, damage in crystal structures, or other chemical change such as molecular bond breaking. The objective is to demonstrate unique microfabrication techniques such as maskless implantation doping and the formation of self‐aligned structures. Preliminary results are presented of doped regions written in silicon by a focused boron beam. Electrical measurements on heavily doped contact regions and on a lightly doped resistive region are in good agreement with what would be expected from conventional ion implantation employing masks. The exposure of electron beam resist by a focused beam of 60‐keV helium ions is also reported. The resist sensitivity is ∼100 times greater for these ions than for electrons. The focused ion beam used in these studies was generated in a focusing arm which includes apertures, deflection plates, and an einzel lens that ...
48 citations
TL;DR: In this paper, a neutral hydrogen atom beam of 1 A (equivalent), 18 keV energy, with small divergence angle (≈ 1°) has been obtained using a grounded ion source.
18 citations
Patent•
11 Nov 1974
TL;DR: In this paper, a well-formed ion beam having a high current is extracted from an ion plasma by a low perveance ion extraction system including focus and extraction electrodes, the extraction electrode having an ion exit aperture and being axially spaced from the focus electrode a distance of at least several times the diameter of the ion exiting aperture.
Abstract: A well-formed ion beam having a high current is extracted from an ion plasma by a low perveance ion extraction system including focus and extraction electrodes, the extraction electrode having an ion exit aperture and being axially spaced from the focus electrode a distance of at least several times the diameter of the ion exit aperture. A voltage differential is applied between the electrodes to define a plasma sheath at the ion source aperture, and the ion beam is extracted from the plasma sheath.
17 citations
TL;DR: In this article, the alignment of the electron and sputter ion beams using the optics of an electron spectrometer used for Auger analysis is described. But the alignment procedure is tedious and requires the use of a Faraday cup.
Abstract: A problem with depth profiling in Auger electron spectroscopy is the alignment of the electron and sputter ion beams so that they are coincident on the specimen at the focal point of the analyzer. Most procedures used to date are tedious and require the use of a Faraday cup. The technique reported here allows the direct, precise, and quick alignment of the ion bombardment beam utilizing the optics of the electron spectrometer used for Auger analysis. A typical 2 kV focused ion beam can be aligned within a few minutes using the phenomenon of low energy ion excited Auger electron analysis.
14 citations
[...]
TL;DR: A brief description of the physical processes involved in the removal of material from the surface being etched is followed by a discussion of several ion etching equipments that are commercially available.
Abstract: The factors that have lead to the current widespread use of ion beam etching are described. A brief description of the physical processes involved in the removal of material from the surface being etched is followed by a discussion of several ion etching equipments that are commercially available. The etching characteristics of one of these systems which was developed in the authors' laboratories are described in some detail. The applications of ion beam etching are then reviewed and the uses of this technique in the production of active devices, VHF quartz oscillator crystals, surface wave and integrated optical circuits, and the preparation of specimens for electron microscopy are described. Finally the place that ion beam etching will take in future technology is forecast
11 citations
TL;DR: In this article, the performance of the oscillating electron electrostatic ion source has been improved by incorporating a small chimney into the ion exit aperture to reduce the field distortion at the aperture.
10 citations
7 citations
TL;DR: The application of a microchannel plate image intensifier to ion beam monitoring is described in this paper, where a micro-channel plate intensifier is applied to the ion beam measurement task.
Abstract: The application of a microchannel plate image intensifier to ion beam monitoring is described
7 citations
TL;DR: In this article, human and avian erythrocytes were ion beam etched in the specimen chamber of a scanning electron microscope and periodically examined during the course of etching in order to demonstrate how sub-surface features reveal themselves during ion beam etching.
7 citations
TL;DR: In this article, the development of compact and efficient ion sources for ion etching and sputtering under high vacuum conditions has improved the versatility of the method both for research and technological applications.
Abstract: In consecution to previous publications some recent developments of ion beam devices and their application are discussed: The construction of compact and efficient ion sources for ion etching and sputtering under high vacuum conditions has improved the versatility of the method both for research and technological applications. As a contribution to basic research in-situ observations of ion etching and sputtering phenomena inside transmission- and scanning electron microscopes have been performed. New variants of chemical reactive sputter deposition have been studied using either bombardment with ions of reactive gases and/or two-beam sputter techniques.
Patent•
22 Mar 1974TL;DR: In this article, a new way of mounting the ion extractor and the electrostatic lens system is presented, which facilitates the removal and replacement of the filament and the grid structure.
Abstract: In an ion beam apparatus wherein ions are generated by the collision of electrons from a filamentary emitter with gas atoms in the vicinity of an electron-attracting grid structure, with subsequent extraction of the ions so generated from the vicinity of the grid structure and the focusing of these ions into a beam by an electrostatic lens system, a new way of mounting the ion extractor and the electrostatic lens system is disclosed which facilitates the removal and replacement of the filament and the grid structure. A configuration of the grid structure is also disclosed which optimizes the profile and the current density of the ion beam.
Patent•
01 Aug 1974
TL;DR: In this article, a thermionic beam is emitted from a hot cathode, which is deflected by a deflection magnet and directed into the gas to be ionized or into a vaporous atmosphere.
Abstract: The invention ion source, capable of delivering high currents, utilizes a thermionic beam - emitted from a hot cathode - which is deflected by a deflection magnet and directed into the gas to be ionized or into a vaporous atmosphere. The atomic ions, that are the result of the ionization, move in the direction opposite that of the ionizing thermionic beam, but they are hardly influenced by the deflection magnet, due to their greater mass and leave the ion source as an ion beam.
TL;DR: In this article, the effect of beam diameter on a surface shape produced by a beam scanning-type ion milling was studied, where an argon ion beam accelerated to 10 keV was electrostatically scanned and the scanning speed was varied as a function of the beam bombarding point.
Abstract: The effect of beam diameter on a surface shape produced by a beam scanning-type ion milling has been studied. An argon ion beam accelerated to 10 keV was electrostatically scanned and the scanning speed was varied as a function of the beam bombarding point. The flatly-formed, wedge-shaped and parabolic surfaces exclusive of the milled-region edges were produced on a Si target surface independently of the beam diameter which varied locally.
01 Jan 1974
TL;DR: In this article, a beam-plasma type ion source is effectively ionized by the microwave power (2 to 20 GHz) transferred from an electron beam through beam- plasma interactions, which are the interactions between the magnetically focused electron beam injection from the ion extractor and the plasma in the drift tube.
Abstract: In a beam-plasma type ion source, the gas is effectively ionized by the microwave power (2 to 20 GHz) transferred from an electron beam through beam- plasma interactions, which are the interactions between the magnetically focused electron beam injection from the ion extractor and the plasma in the drift tube. A high-density and stable plasma is obtained in the drift tube by this beam- plasma discharge because of the microwave heating ionization and the feedback phenomenon which keeps the plasma density constant. When ions are extracted from the high-density plasma produced in the drift tube, they are accelerated in the opposite direction of the electron beam by the same electric field that accelerates the electron beam, and the space charge of the ion beam is highly neutralized by the injected electron beam near the ion extractor. Therefore, a high-intensity and well-confined ion beam is obtained. Moreover, although the extracted ion current increases, the emittance of the ion beam is kept low because of ions trapped in the negative-potential well induced by the electron beam near the ion extractor. (auth)
TL;DR: In this paper, a new type of ion micro-analyzer with an electron beam guiding function by using the ion source of a similar structure is proposed, and some dynamic characteristics are reported.
Abstract: The gas in the drift tube is ionized by the microwave (2–10 GHz) power induced by the beam-plasma interactions since a magnetically focused electron beam injected into a drift tube from an ion extractor interacts strongly with the plasma. Therefore, a high density plasma is effectively generated in the drift tube by the beam-plasma discharge. A well-confined and high-intensity ion beam can be extracted because of the neutralization of the injected beam near the extractor. When the extracted ion current increases, the high density plasma then generated is stable in density because of a feedback phenomenon in which the beam-plasma interactions keep the plasma density constant. Some dynamic characteristics are reported. As a special application, a new type of ion micro-analyzer with an electron beam guiding function by using the ion source of a similar structure is proposed.
01 Jan 1974
TL;DR: In this article, two digital computer programs have been employed in the simulation of plasma expansion cups and the ion beams drawn from them, where the axially symmetric ion beam is simulated with a relativistic beam program assuming that a particular plasma surface exists on the plasma expansion cup.
Abstract: Two digital computer programs have been employed in the simulation of plasma expansion cups and the ion beams drawn from them. The axially symmetric ion beam is simulated with a relativistic beam program assuming that a particular plasma surface exists on the plasma expansion cup. Electrodes are employed which produce a focused ion beam at the voltage and current desired assuming space- charge-limited emission from the plasma surface. Then, boundary conditions are taken from the beam simulation near the plasma surface and used as input data for the plasma simulation program. The shape of the cup and the plasma injection rate can then be varied until the proper ion current is obtained from a surface close to that assumed in the beam program. Using this technique, deuteron beams of more than one ampere of current and source current densities in excess of 10$sup 4$ amperes per meter$sup 2$ have been simulated. (auth)
Abstract: The operating voltage and pressure of the twin anode electrostatic ion gun have been reduced and the range of applications extended by incorporating a thermionic source of electrons. The construction and performance of the ion gun is described. The energy of the emerging ion beam has been reduced and thus the ions will produce less structural damage to any specimen under ion bombardment. This ion gun should have applications in ultra high vacuum.
TL;DR: In this article, a compact, cryogenically cooled, supersonic molecular beam unit is described, which is suited to the neutralization of ion beams having energies as low as 2 eV.