A
A. Birner
Researcher at Max Planck Society
Publications - 23
Citations - 2968
A. Birner is an academic researcher from Max Planck Society. The author has contributed to research in topics: Photonic crystal & Silicon photonics. The author has an hindex of 14, co-authored 23 publications receiving 2919 citations.
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Hexagonal pore arrays with a 50-420 nm interpore distance formed by self-organization in anodic alumina
TL;DR: In this article, self-organized hexagonal pore arrays with a 50-420 nm interpore distance in anodic alumina have been obtained by anodizing aluminum in oxalic, sulfuric, and phosphoric acid solutions.
Journal ArticleDOI
Tunable two-dimensional photonic crystals using liquid crystal infiltration
S. W. Leonard,J. P. Mondia,H. M. van Driel,Ovidiu Toader,Sajeev John,Kurt Busch,A. Birner,Ulrich Gösele,Volker Dr. Lehmann +8 more
TL;DR: In this article, a liquid crystal was infiltrated into the air pores of a macroporous silicon photonic crystal with a triangular lattice pitch of 1.58 and a band gap wavelength range of 3.3-5.7 µm.
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Fabrication and Microstructuring of Hexagonally Ordered Two‐Dimensional Nanopore Arrays in Anodic Alumina
TL;DR: In this article, the residue is purified via chromatography (neutral alox/toluene) (75 %, m.p. (54 %) mgSO4.
Journal ArticleDOI
Polycrystalline nanopore arrays with hexagonal ordering on aluminum
TL;DR: In this article, a two-step anodization process was used to oxidize aluminum in oxalic, sulfuric, and phosphoric acid solutions, and hexagonally ordered pore arrays were obtained within domains of a few micrometers, which are separated from neighboring domains with different orientation of the pore lattice.
Journal ArticleDOI
Macroporous Silicon: A Two‐Dimensional Photonic Bandgap Material Suitable for the Near‐Infrared Spectral Range
A. Birner,U. Grüning,S. Ottow,A. Schneider,Frank Müller,Volker Lehmann,Helmut Föll,Ulrich Gösele +7 more
TL;DR: In this article, two different triangular lattices of circular air rods with lattice constants of 2.3 and 1.5 μm were etched at least 75 μm deep in an n-type silicon substrate by electrochemical pore formation in aqueous hydrofluoric acid.