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A. V. Sorochkin

Researcher at Russian Academy of Sciences

Publications -  9
Citations -  86

A. V. Sorochkin is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Molecular beam epitaxy & Photodetector. The author has an hindex of 5, co-authored 8 publications receiving 79 citations.

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HgCdTe Heterostructures on Si (310) Substrates for Midinfrared Focal Plane Arrays

TL;DR: In this paper, the results of measurements and discussion of photoelectric parameters of an infrared photodetector of a format of 320 × 256 elements with a step of 30 μm based on a hybrid assembly of a matrix photosensitive cell with a Si multiplexer are presented.
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Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

TL;DR: In this paper, an ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed, and the films appeared to contain initially neutral Te-related defects with concentration of 1017 cm−3.
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Photoluminescence of Hg1 − x Cd x Te based heterostructures grown by molecular-beam epitaxy

TL;DR: In this article, the photoluminescence of Hg1 − x Cd x Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied.
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Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates

TL;DR: The electrical and optical properties of epitaxial CdHgTe films grown on silicon substrates by molecular-beam epitaxy have been studied in this paper, and the results of photoluminescence measurements are indicative of the high structural perfection of the films, and Hall data combined with low-energy ion treatment point to a low concentration of residual donors.
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HgCdTe heterostructures on Si(310) substrates for infrared photodetectors

TL;DR: In this paper, conditions for producing HgCdTe/Si(310) heterostructures for the spectral range of 3-5 µm which are suitable for fabricating high-quality devices were determined.