Journal ArticleDOI
Photoluminescence of Hg1 − x Cd x Te based heterostructures grown by molecular-beam epitaxy
K. D. Mynbaev,N. L. Bazhenov,V. I. Ivanov-Omskii,Nikolay N. Mikhailov,M. V. Yakushev,A. V. Sorochkin,V. G. Remesnik,Sergey A. Dvoretsky,V. S. Varavin,Yu. G. Sidorov +9 more
TLDR
In this article, the photoluminescence of Hg1 − x Cd x Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied.Abstract:
Photoluminescence (PL) of Hg1 − x Cd x Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied. It is shown that a pronounced disruption of the long-range order in the crystal lattice is characteristic of structures of this kind. It is demonstrated that the observed disordering is mostly due to the nonequilibrium nature of MBE and can be partly eliminated by postgrowth thermal annealing. Low-temperature spectra of epitaxial layers and structures with wide potential wells are dominated by the recombination peak of an exciton localized in density-of-states tails; the energy of this peak is substantially lower than the energy gap. In quantum-well (QW) structures at low temperatures, the main PL peak is due to carrier recombination between QW levels and the energy of the emitted photon is strictly determined by the effective (with the QW levels taken into account) energy gap.read more
Citations
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Journal ArticleDOI
Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm
S. V. Morozov,V. V. Rumyantsev,Mikhail A. Fadeev,M. S. Zholudev,K. E. Kudryavtsev,A. V. Antonov,A. M. Kadykov,A. A. Dubinov,N. N. Mikhailov,Sergey A. Dvoretsky,Vladimir I. Gavrilenko +10 more
TL;DR: In this article, the authors report on stimulated emission at wavelengths up to 19.5μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCDTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates.
Journal ArticleDOI
Long wavelength stimulated emission up to 9.5 μm from HgCdTe quantum well heterostructures
S. V. Morozov,S. V. Morozov,Vladimir Rumyantsev,Vladimir Rumyantsev,A. M. Kadykov,A. M. Kadykov,Alexander A. Dubinov,Alexander A. Dubinov,K. E. Kudryavtsev,K. E. Kudryavtsev,A. V. Antonov,A. V. Antonov,Nikolay N. Mikhailov,Nikolay N. Mikhailov,S. A. Dvoretskii,Vladimir I. Gavrilenko,Vladimir I. Gavrilenko +16 more
TL;DR: Stimulated emission from waveguide HgCdTe structures with several quantum wells inside waveguide core is demonstrated at wavelengths up to 9.5μm in this article, where the authors conclude that the potential for long-wavelength lasers is not exhausted.
Journal ArticleDOI
Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates
I. I. Izhnin,A. I. Izhnin,H. V. Savytskyy,M M Vakiv,Y M Stakhira,O E Fitsych,M. V. Yakushev,A. V. Sorochkin,I. V. Sabinina,Sergey A. Dvoretsky,Yu. G. Sidorov,V. S. Varavin,M Pociask-Bialy,K. D. Mynbaev +13 more
TL;DR: In this paper, an ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed, and the films appeared to contain initially neutral Te-related defects with concentration of 1017 cm−3.
Journal ArticleDOI
Luminescence of II–VI and III–V nanostructures
K. D. Mynbaev,K. D. Mynbaev,A.V. Shilyaev,A. A. Semakova,A. A. Semakova,E.V. Bykhanova,E.V. Bykhanova,N. L. Bazhenov +7 more
Abstract: Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.
Journal ArticleDOI
Arsenic complexes optical signatures in As-doped HgCdTe
TL;DR: In this article, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements.
References
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Journal ArticleDOI
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TL;DR: In this paper, fundamental and technological issues associated with the development and exploitation of third-generation IR photon detectors are discussed, and the most recently developed focal plane arrays based on type-II strained-layer superlattices and quantum dot IR photodetectors are considered.
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Light absorption and emission in semiconductors with band gap fluctuations—A study on Cu(In,Ga)Se2 thin films
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Journal ArticleDOI
Growth of Hg1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control
N. N. Mikhailov,R.N. Smirnov,S.A. Dvoretsky,Yu.G. Sidorov,V. A. Shvets,E. V. Spesivtsev,S. V. Rykhlitski +6 more
TL;DR: In this paper, the authors demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg1-xCdxTe by molecular beam epitaxy.
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