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I. I. Izhnin
Researcher at Tomsk State University
Publications - 77
Citations - 412
I. I. Izhnin is an academic researcher from Tomsk State University. The author has contributed to research in topics: Molecular beam epitaxy & Ion milling machine. The author has an hindex of 11, co-authored 73 publications receiving 352 citations.
Papers
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Journal ArticleDOI
Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates
I. I. Izhnin,A.V. Voitsekhovsky,A. G. Korotaev,O. I. Fitsych,A. Yu. Bonchyk,H. V. Savytskyy,K. D. Mynbaev,K. D. Mynbaev,V. S. Varavin,Sergey A. Dvoretsky,Sergey A. Dvoretsky,Nikolay N. Mikhailov,M. V. Yakushev,Rafal Jakiela +13 more
TL;DR: A defect study was performed on arsenic-implanted Hg 1-x Cd x Te (x ǫ = 0.23-0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabrication of p + -n-type photodiodes.
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Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates
I. I. Izhnin,A. I. Izhnin,H. V. Savytskyy,M M Vakiv,Y M Stakhira,O E Fitsych,M. V. Yakushev,A. V. Sorochkin,I. V. Sabinina,Sergey A. Dvoretsky,Yu. G. Sidorov,V. S. Varavin,M Pociask-Bialy,K. D. Mynbaev +13 more
TL;DR: In this paper, an ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed, and the films appeared to contain initially neutral Te-related defects with concentration of 1017 cm−3.
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Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors
TL;DR: In this article, the relaxation of electrical properties of As and Sb-doped HgCdTe epitaxial layers, which were converted into n-type by ion milling, is studied.
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The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe
TL;DR: In this article, the dependence of conductivity-type conversion depth in vacancy-doped Hg1−xCdxTe (MCT) alloys subjected to ion milling on alloy composition and treatment temperature is studied both experimentally and theoretically.
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Properties of MBE CdxHg1−xTe/GaAs structures modified by ion‐beam milling
V. V. Bogoboyashchyy,S. A. Dvoretsky,I. I. Izhnin,N. N. Mikhailov,Yu. G. Sidorov,F. F. Sizov,V. S. Varavin,V. A. Yudenkov +7 more
TL;DR: In this article, a modification of electrical properties of n-and p-type MBE structures with passivation gradient band gap layers under ion milling was investigated, and the diffusion-like character of the p−n conversion front movement was confirmed.