Showing papers by "Abd. Rashid bin Mohd Yusoff published in 2020"

Molecular materials as interfacial layers and additives in perovskite solar cells.

Abstract: Solar cells based on organo-metal halide perovskites have gained unprecedented research interest over the last few years due to their low-cost solution processability, high power conversion efficiency, which has recently reached a certified value of 25.2%, and abundance of raw materials. Nevertheless, the best efficiencies remain below the Shockley–Queisser theoretical limit of 32.5% due to several losses arising from either defect traps present in the bulk of the perovskite absorber or at the device heterointerfaces. While bulk defects are detrimental for the device performance by mainly limiting the open circuit voltage, interfacial layers are also crucial. They dictate the charge transfer/transport from the perovskite layer to the collecting electrodes, hence influencing the device photocurrent, but also act as protective barriers against oxygen and moisture penetration. Molecular materials and additives are widely used to improve the bulk properties of perovskite absorbers through the formation of high-quality perovskite films with superior optoelectronic properties, and improved crystallinity, and also of electronically clean interfaces with minimum losses during charge transfer/transport. In this review, we analyze the predominant pathways that contribute to voltage and current losses due to poor interfaces and also due to non-radiative recombination losses arising from inferior perovskite morphology and its inherent polycrystalline and highly defective nature. We then discuss strategies for achieving interfacial organic and inorganic molecular materials for application as electron and hole transport layers in perovskite solar cells with ideal energy levels, high charge mobilities and improved thermal, photo, and structural stability. Moreover, the prerequisites for molecular additives to achieve dimensionality engineering, defect passivation, molecular cross-linking, interfacial energy alignment and electronic doping are thoroughly discussed. Finally, we examine prospects for future research directions and commercialization.

Efficient colloidal quantum dot light-emitting diodes operating in the second near-infrared biological window

Abstract: Semiconductor colloidal quantum dots (CQDs) offer size- and composition-tunable luminescence of high colour purity. Importantly, their emission can be tuned deep into the second biological near-infrared (NIR-II) window (1,000–1,700 nm). However, applications are hindered by the low efficiencies achieved to date. Here, we report NIR-II CQD light-emitting diodes with an external quantum efficiency of 16.98% and a power conversion efficiency of 11.28% at wavelength 1,397 nm. This performance arises from device engineering that delivers a high photoluminescence quantum yield and charge balance close to unity. More specifically, we employed a binary emissive layer consisting of silica-encapsulated silver sulfide (Ag2S@SiO2) CQDs dispersed in a caesium-containing triple cation perovskite matrix that serves as an additional passivation medium and a carrier supplier to the emitting CQDs. The hole-injection contact also features a thin porphyrin interlayer to balance the device current and enhance carrier radiative recombination. Semiconductor nanocrystals with efficient tunable emission in the 1,000–1,700 nm window could prove useful for applications in deep biological imaging and sensing.

Suppressing the Photocatalytic Activity of Zinc Oxide Electron-Transport Layer in Nonfullerene Organic Solar Cells with a Pyrene-Bodipy Interlayer.

Abstract: Organic solar cells based on nonfullerene acceptors have recently witnessed a significant rise in their power conversion efficiency values. However, they still suffer from severe instability issues...

High-humidity processed perovskite solar cells

Abstract: Perovskite solar cells (PSCs) are considered the next-in-line technology in the solar industry. This technology can reduce the cost of solar energy to an unprecedented level given their remarkably high efficiency and ease of manufacturing. Hitherto, many studies have preferred well-regulated inert conditions or a low-humidity atmosphere (relative humidity < 30%) for fabricating highly efficient PSCs to avoid the adverse impact of humidity on a perovskite film. This is because humidity is the main reason for perovskite instability and can alter the film growth kinetics during the fabrication process, thereby ultimately affecting the morphology of the grown film and the device performance. The requirement for an inert or low-humidity environment can increase the capital costs of setting up the fabrication facilities and hamper the large-scale production of PSCs. Therefore, efforts have been devoted to preparing PSC devices in a high-humidity environment to comprehend perovskite crystal growth kinetics and improve the morphological properties and stability of the perovskite film. This review highlights the modifications implemented towards (1) perovskite materials, (2) charge-selective layers, and (3) deposition protocols by spin-coating, to adapt a high-humidity atmosphere (RH ≥ 30%) for developing efficient PSCs. The progress of scalable processing methods such as blade-coating, inkjet printing, slot-die coating, and spray-coating, and the translation of spin-coating-modified protocols into these methods are also discussed. Finally, this review provides the remaining challenges to realizing the high-humidity fabrication of PSCs for commercialization.

A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation.

Abstract: Organo-metal halide perovskite field-effect transistors present serious challenges in terms of device stability and hysteresis in the current-voltage characteristics. Migration of ions located at grain boundaries and surface defects in the perovskite film are the main reasons for instability and hysteresis issues. Here, we introduce a perovskite grain molecular cross-linking approach combined with amine-based surface passivation to address these issues. Molecular cross-linking was achieved through hydrogen bond interactions between perovskite halogens and dangling bonds present at grain boundaries and a hydrophobic cross-linker, namely diethyl-(12-phosphonododecyl)phosphonate, added to the precursor solution. With our approach, we obtained smooth and compact perovskite layers composed of tightly bound grains hence significantly suppressing the generation and migration of ions. Moreover, we achieved efficient surface passivation of the perovskite films upon surface treatment with an amine-bearing polymer, namely polyethylenimine ethoxylated. With our synergistic grain and surface passivation approach, we were able to demonstrate the first perovskite transistor with a complete lack of hysteresis and unprecedented stability upon continuous operation under ambient conditions. Added to the merits are its ambipolar transport of opposite carriers with balanced hole and electron mobilities of 4.02 and 3.35 cm2 V-1 s-1, respectively, its high Ion/Ioff ratio >104 and the lowest sub-threshold swing of 267 mV dec-1 reported to date for any perovskite transistor. These remarkable achievements obtained through a cost-effective molecular cross-linking of grains combined with amine-based surface passivation of the perovskite films open a new era and pave the way for the practical application of perovskite transistors in low-cost electronic circuits.

Perovskite Flash Memory with a Single-Layer Nanofloating Gate

Abstract: Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic semiconductors, a p-type polyfluorene and an n-type fullerene that form a donor:acceptor interpenetrating network that serves as the charge storage unit, and of an insulating polystyrene that acts as the tunneling dielectric. Under such a framework, we realize the first non-volatile flash memory transistor based on a perovskite channel. This simplified, solution-processed perovskite flash memory displays unique performance metrics such as a large memory window of 30 V, an on/off ratio of 9 × 107, short write/erase times of 50 ms, and a satisfactory retention time exceeding 106 s. The realization of the first flash memory transistor using a single-crystal perovskite channel could be a valuable direction for perovskite electronics research.