Showing papers by "Abdulmecit Türüt published in 2010"
TL;DR: In this paper, the currentvoltage and capacitance-voltage characteristics of Ni/n-GaN Schottky diodes have been measured in the temperature range of 80-400 K with steps of 20 K, and the modified activation energy plot according to the barrier inhomogeneity model has given the Richardson constant A∗ as 80 or 85 A/(cm2 K2)
Abstract: We report the current-voltage (I-V) and capacitance-voltage characteristics (C-V) of Ni/n-GaN Schottky diodes Gallium nitride is a highly promising wide band gap semiconductor for applications in high power electronic and optoelectronic devices which require Schottky barriers for modulating the channel mobile charge The I-V and C-V characteristics of the diodes have been measured in the temperature range of 80–400 K with steps of 20 K Thermal carrier concentration and barrier height versus temperature plots have been obtained from the C−2-V characteristics, and a value of α=−140 meV/K for temperature coefficient of the barrier height The modified activation energy plot according to the barrier inhomogeneity model has given the Richardson constant A∗ as 80 or 85 A/(cm2 K2)
106 citations
TL;DR: In this article, a metal/interlayer/semiconductor (MIS) diodes were prepared by coating of an organic film on p-Si substrate by using thin interlayer of the OG organic material.
59 citations
TL;DR: In this paper, the forward bias currentvoltage (I-V) characteristics of Al/Rhodamine-101/n-GaAs structure have been investigated in the temperature range of 80-350 K.
53 citations
TL;DR: In this paper, an Al/Organic I nterlayer (Congo Red=CR)/Inorganic S emiconductor ( p -Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer was presented.
49 citations
TL;DR: In this paper, a modified Norde's function combined with the conventional I-V method has been used to extract the parameters including the barrier height and the series resistance, and it has been seen that there was a good agreement between those from both method.
Abstract: The current–voltage ( I–V ) and the capacitance–voltage ( C–V ) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. The ideality factor and the barrier height from the I–V characteristics have been determined as 3.14 and 0.80 eV, respectively. A modified Norde's function combined with the conventional I–V method has been used to extract the parameters including the barrier height and the series resistance. The barrier height and the series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there was a good agreement between those from both method. It has also been seen that the values of diode capacitance increased up to the constant values for the forward bias.
46 citations
TL;DR: In this article, an Au/Orcein/p-Si/Al device was fabricated and the current-voltage measurements of the devices showed diode characteristics, and the capacitance measurements were determined as a function of voltage and frequency.
42 citations
TL;DR: Experimental results show that both the RS and NSS values should be taken into account in determining frequency-dependent electrical characteristics of the interface states in Sn/p-Si metal semiconductor Schottky structures.
39 citations
TL;DR: An Au/Carmine/ n -Si Schottky device was fabricated and the currentvoltage (I-V ) and the capacitance-voltage/frequency characteristics of the structure have been measured at room temperature as discussed by the authors.
34 citations
TL;DR: In this article, the ideality factor n and barrier height Φ a p of the sputtered Ni/p-InP Schottky diodes have been calculated from their experimental currentvoltage (I-V ) characteristics in the temperature range of 60-400 K with steps of 10 K.
28 citations
TL;DR: In this paper, the authors considered multi-Gaussian distribution of barrier height for non-interactive barrier inhomogeneities in the inhomogeneous Schottky diodes, and showed the presence of the intersecting behavior in the forward-bias currentvoltage (I-V) curves for the double Gaussian distribution model at low temperatures.
27 citations
TL;DR: In this article, an Au/Indigotindisulfonate Sodium (IS)/n -Si/Al device was fabricated and the currentvoltage measurements of the devices showed diode characteristics.
TL;DR: In this article, the authors measured the I-V characteristics of Ti/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 60-320K by the steps of 20K.
TL;DR: In this article, the authors investigated the currentvoltage and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p-Si semiconductor substrate.
Abstract: We investigated the current-voltage ( I-V ) and capacitance-voltage ( C-V ) characteristics of identically prepared safranine T/ p -Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p -Si semiconductor substrate. It was seen that the safranine T organic thin film on the p -Si substrate showed a good rectifying behavior. The barrier heights and ideality factors of all devices were extracted from the electrical characteristics. The mean barrier height and mean ideality factor from I-V measurements were calculated as 0.59±0.02 eV and 1.80±0.20, respectively. Also, the mean barrier height and mean acceptor doping concentration from C-V measurements were calculated as 0.67±0.10 eV and (6.96±0.37)×10 14 cm -3 , respectively. The discrepancy in the barrier height values obtained from I-V and C-V characteristics has been attributed to different nature of the measurements. The discrepancy between these values can also be due to the existence of the interfacial native oxide and the organic safranine T thin layer between the semiconductor substrate and top contact metal.
TL;DR: In this paper, the rectifying junction characteristics of methyl red organic film on n-type InP substrate have been studied and it has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film increases the effective barrier height by influencing the space charge region.
Abstract: The rectifying junction characteristics of methyl red (MR) organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film increases the effective barrier height by influencing the space charge region of the n-type InP. The barrier height and ideality factor values for this structure have been obtained as 0.75 eV and 1.93 from the forward bias current-voltage characteristics, respectively. By using capacitance-voltage characteristics at 1 MHz, the barrier height and the carrier concentration values have been calculated as 0.93 eV and 5.13×1015 cm−3, respectively. The energy distributions of the interface states and their relaxation times have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics. Moreover, it was seen that both the interface-state density and the relaxation time of the interface states decreased with bias voltage from experimental results.