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Author

Abhijit Biswas

Other affiliations: IMEC
Bio: Abhijit Biswas is an academic researcher from University of Calcutta. The author has contributed to research in topics: Transconductance & Threshold voltage. The author has an hindex of 13, co-authored 98 publications receiving 461 citations. Previous affiliations of Abhijit Biswas include IMEC.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the physical and electrical properties of sputtered deposited Y2O3 films on NH4OH treated n-GaAs substrate were investigated by using X-ray photoelectron spectroscopy (XPS) and SIS.

39 citations

Journal ArticleDOI
TL;DR: In this paper, the analog performance of an InGaAs-channel MOSFET was reported for the first time for an inversion-type enhancement-mode InGaA-channel channel MOS-FET.
Abstract: MOSFETs with InGaAs in the channel show great promise for high-performance digital applications owing to enhanced electron mobility. In this letter, the analog performance is reported for the first time for an inversion-type enhancement-mode InGaAs-channel MOSFET. With the help of a device simulator, the device parameters for analog applications such as transconductance , transconductance-to-drain-current ratio , drain resistance , intrinsic gain, and unity-gain cutoff frequency are studied for such a device and compared with those for a similarly sized MOSFET. Our results show that InGaAs devices outperform their Si counterparts for analog applications.

38 citations

Journal ArticleDOI
TL;DR: In this paper, the dynamical encirclement of non-Hermitian EPs has been studied in a non-hermitian system with state-flipping and peculiar phase accumulation features.
Abstract: Exceptional points (EPs) in non-Hermitian systems have recently attracted considerable attention owing to unique state-flipping and peculiar phase accumulation features. The dynamical encirclement ...

35 citations

Journal ArticleDOI
TL;DR: In this article, a detailed investigation of the impact of different barrier layers on the analog performance of an InGaAs MOSFET is reported for the first time, and the device parameters for analog applications, such as transconductance (gm), transconductances-to-drive current ratio (gm/IDS), drain conductance (gd), intrinsic gain (m/gd), and unity-gain cutoff frequency (fT) are studied with the help of a device simulator.
Abstract: A barrier layer in an InGaAs MOSFET, which shows promise for high-performance logic applications due to enhanced electron mobility, is known to further improve the electron mobility. In this paper, a detailed investigation of the impact of different barrier layers on the analog performance of an InGaAs MOSFET is reported for the first time. The device parameters for analog applications, such as transconductance (gm), transconductance-to-drive current ratio (gm/IDS), drain conductance (gd), intrinsic gain (gm/gd), and unity-gain cutoff frequency (fT) are studied with the help of a device simulator. A barrier layer is found to improve the analog performance of such a device in general; with a double-barrier layer showing the best performance. An investigation on the impact of varying the indium content in the channel on the analog performance of an InGaAs MOSFET with a double-barrier layer is also reported in this paper. It is found that a higher In content results in better analog performance of such devices.

30 citations

Journal ArticleDOI
TL;DR: In this paper, the authors proposed a phosphor-free dual wavelength monolithic white LED comprising a tunnel junction that separates a yellow light-emitting InGaN/GaN multiple quantum well (MQW) structure without an electron blocking layer (EBL) from a blue light emitting MQW structure.

20 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, a Z-shaped (ZS)-TFET was proposed to suppress the ambipolar behavior and improve RF performance in tunnel field effect transistors (TFETs), and the proposed ZS-TFET is more scalable than other vertical band-to-band-based TFETs.
Abstract: To suppress the ambipolar behavior and improve RF performance in tunnel field-effect transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more scalable than other vertical band-to-band-based TFETs and provides higher ON-state current ( ${I} _{ {\mathrm{\scriptscriptstyle ON}}}$ ), larger ON/OFF current ratio ( ${I} _{ {\mathrm{\scriptscriptstyle ON}}}/{I} _{ {\mathrm{\scriptscriptstyle OFF}}}$ ) and lower subthreshold swing compared to conventional TFETs. These advantages stem from the tunneling junction in the ZS-TFET being perpendicular to the channel direction, which facilitates the formation of a relatively large tunneling junction area. The ZS body makes use of both vertical and horizontal fields while suppressing the lateral parasitic tunneling current. In addition, by using a ZS gate in the proposed device, the energy band diagram near the source is modulated to create an N+ source pocket which creates a downward band bending of the potential, similar to PNPN-like structures. Finally, the proposed structure significantly improves the analog/RF figure-of-merit.

103 citations

Journal ArticleDOI
TL;DR: In this article, the authors review the fabrication technology of SiGe hetero-structures aiming at growth of high quality materials and discuss the relaxation of strain of siGe buffer layers grown on Si substrates.

87 citations

Journal ArticleDOI
TL;DR: It can be anticipated that this trendy field of interest will be indispensable in providing new perspectives in maneuvering the flow of light in the diverse physical platforms in optics, photonics, condensed matter, optoelectronics, and beyond, and will offer distinctive application prospects in novel functional materials.
Abstract: The exploration of quantum-inspired symmetries in optical and photonic systems has witnessed immense research interest both fundamentally and technologically in a wide range of subject areas in physics and engineering. One of the principal emerging fields in this context is non-Hermitian physics based on parity-time symmetry, originally proposed in the studies pertaining to quantum mechanics and quantum field theory and recently ramified into a diverse set of areas, particularly in optics and photonics. The intriguing physical effects enabled by non-Hermitian physics and PT symmetry have enhanced significant application prospects and engineering of novel materials. In addition, there has been increasing research interest in many emerging directions beyond optics and photonics. Here, the state-of-the art developments in the field of complex non-Hermitian physics based on PT symmetry in various physical settings are brought together, and key concepts, a background, and a detailed perspective on new emerging directions are described. It can be anticipated that this trendy field of interest will be indispensable in providing new perspectives in maneuvering the flow of light in the diverse physical platforms in optics, photonics, condensed matter, optoelectronics, and beyond, and will offer distinctive application prospects in novel functional materials.

68 citations