Mathematical Handbook for Scientists and Engineers

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Λιόλιος Ξερολιβαδιώτης : ένας αγνοημένος Μακεδόνας αγωνιστής του '21 και λίγα για την ιστορία του Ξερολιβάδου/ Γιώργου Χ. Χιονίδη

To suppress the ambipolar behavior and improve RF performance in tunnel field-effect transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more scalable than other vertical band-to-band-based TFETs and provides higher ON-state current ( ${I} _{ {\mathrm{\scriptscriptstyle ON}}}$ ), larger ON/OFF current ratio ( ${I} _{ {\mathrm{\scriptscriptstyle ON}}}/{I} _{ {\mathrm{\scriptscriptstyle OFF}}}$ ) and lower subthreshold swing compared to conventional TFETs. These advantages stem from the tunneling junction in the ZS-TFET being perpendicular to the channel direction, which facilitates the formation of a relatively large tunneling junction area. The ZS body makes use of both vertical and horizontal fields while suppressing the lateral parasitic tunneling current. In addition, by using a ZS gate in the proposed device, the energy band diagram near the source is modulated to create an N+ source pocket which creates a downward band bending of the potential, similar to PNPN-like structures. Finally, the proposed structure significantly improves the analog/RF figure-of-merit.

A Novel PNPN-Like Z-Shaped Tunnel Field- Effect Transistor With Improved Ambipolar Behavior and RF Performance

Fabrication technology of SiGe hetero-structures and their properties

The exploration of quantum-inspired symmetries in optical and photonic systems has witnessed immense research interest both fundamentally and technologically in a wide range of subject areas in physics and engineering. One of the principal emerging fields in this context is non-Hermitian physics based on parity-time symmetry, originally proposed in the studies pertaining to quantum mechanics and quantum field theory and recently ramified into a diverse set of areas, particularly in optics and photonics. The intriguing physical effects enabled by non-Hermitian physics and PT symmetry have enhanced significant application prospects and engineering of novel materials. In addition, there has been increasing research interest in many emerging directions beyond optics and photonics. Here, the state-of-the art developments in the field of complex non-Hermitian physics based on PT symmetry in various physical settings are brought together, and key concepts, a background, and a detailed perspective on new emerging directions are described. It can be anticipated that this trendy field of interest will be indispensable in providing new perspectives in maneuvering the flow of light in the diverse physical platforms in optics, photonics, condensed matter, optoelectronics, and beyond, and will offer distinctive application prospects in novel functional materials.

Parity-Time Symmetry in Non-Hermitian Complex Optical Media

Characterization of Y2O3 gate dielectric on n-GaAs substrates

MOSFETs with InGaAs in the channel show great promise for high-performance digital applications owing to enhanced electron mobility. In this letter, the analog performance is reported for the first time for an inversion-type enhancement-mode InGaAs-channel MOSFET. With the help of a device simulator, the device parameters for analog applications such as transconductance , transconductance-to-drain-current ratio , drain resistance , intrinsic gain, and unity-gain cutoff frequency are studied for such a device and compared with those for a similarly sized MOSFET. Our results show that InGaAs devices outperform their Si counterparts for analog applications.

Study of InGaAs-Channel MOSFETs for Analog/Mixed-Signal System-on-Chip Applications

Exceptional points (EPs) in non-Hermitian systems have recently attracted considerable attention owing to unique state-flipping and peculiar phase accumulation features. The dynamical encirclement ...

Exceptional Point and toward Mode-Selective Optical Isolation

A barrier layer in an InGaAs MOSFET, which shows promise for high-performance logic applications due to enhanced electron mobility, is known to further improve the electron mobility. In this paper, a detailed investigation of the impact of different barrier layers on the analog performance of an InGaAs MOSFET is reported for the first time. The device parameters for analog applications, such as transconductance (gm), transconductance-to-drive current ratio (gm/IDS), drain conductance (gd), intrinsic gain (gm/gd), and unity-gain cutoff frequency (fT) are studied with the help of a device simulator. A barrier layer is found to improve the analog performance of such a device in general; with a double-barrier layer showing the best performance. An investigation on the impact of varying the indium content in the channel on the analog performance of an InGaAs MOSFET with a double-barrier layer is also reported in this paper. It is found that a higher In content results in better analog performance of such devices.

Abhijit Biswas

Papers

Characterization of Y2O3 gate dielectric on n-GaAs substrates

Study of InGaAs-Channel MOSFETs for Analog/Mixed-Signal System-on-Chip Applications

Exceptional Point and toward Mode-Selective Optical Isolation

Impact of Different Barrier Layers and Indium Content of the Channel on the Analog Performance of InGaAs MOSFETs

Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures