A
Abhishek K. Singh
Researcher at Indian Institute of Science
Publications - 389
Citations - 9883
Abhishek K. Singh is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Medicine & Band gap. The author has an hindex of 44, co-authored 321 publications receiving 7354 citations. Previous affiliations of Abhishek K. Singh include University of California, Santa Barbara & Tata Institute of Fundamental Research.
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Journal Article
Mechanical and electronic properties of pristine and Ni-doped Si, Ge, and Sn sheets
TL;DR: It is found that planar as well as buckled structure is stable for Ni-doped silicene, but the buckled sheet has slightly lower total energy and the planar silicenes sheet has unstable phonon modes.
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Atomistic Origin of Phase Stability in Oxygen-Functionalized MXene: A Comparative Study
Avanish Mishra,Pooja Srivastava,Pooja Srivastava,Abel Carreras,Isao Tanaka,Hiroshi Mizuseki,Kwang-Ryeol Lee,Abhishek K. Singh +7 more
TL;DR: In this article, the stability of fully O-functionalized (M2CO2) MXenes was investigated using first-principles calculations, and it was shown that for M = Sc and Y the CB phase is stable.
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Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure.
Tribhuwan Pandey,Avinash P. Nayak,Jin Liu,Samuel T. Moran,Joon-Seok Kim,Lain-Jong Li,Jung-Fu Lin,Deji Akinwande,Abhishek K. Singh +8 more
TL;DR: The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene.
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Strain-induced indirect-to-direct band-gap transition in bulk SnS2
Babu Ram,Abhishek K. Singh +1 more
TL;DR: In this paper, the effect of uniform biaxial tensile (BT) strain on the dielectric functions, optical oscillator strength, and exciton binding energy as a function of the applied strain was investigated.
Journal ArticleDOI
Mechanical and electronic properties of pristine and Ni-doped Si, Ge, and Sn sheets
TL;DR: In this article, the authors explore the possibility of stabilizing the planar form of silicene by Ni doping using first principles density functional theory based calculations and find that planar as well as buckled structure is stable for Ni-doped Silicene, but the buckled sheet has slightly lower total energy.