Alfonso Patti

TL;DR: In this article, the authors reviewed some recent advances in dielectrics technology currently adopted to optimize the performances of SiC and gallium nitride transistors, focusing on the optimization of SiO2/SiC interfaces in 4H-SiC MOSFETs by passivation processes of the gate oxides.

TL;DR: In this article, some of the present scientific challenges for SiC and GaN power devices technology are reviewed, in particular, the topics selected in this work will be the SiO2/SiC interface passivation processes to improve the channel mobility in 4H-SiC MOSFETs, the current trends for gate dielectrics in GaN technology and the viable routes to obtain normally off HEMTs.

TL;DR: In this paper, the role of carbon-related traps in GaN-based ungated high-electron mobility transistor structures has been investigated both experimentally and by means of numerical simulations.

TL;DR: In this paper, the authors reported on the behavior of Al/Ti/p-GaN interfaces as gate contacts for normal off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics.

TL;DR: In this article, slow and fast trap states in metal-oxide-semiconductor (MOS) capacitors fabricated on recessed AlGaN/GaN heterostructures were studied by frequency dependent conductance measurements.