Journal ArticleDOI
Recent advances on dielectrics technology for SiC and GaN power devices
Fabrizio Roccaforte,Patrick Fiorenza,Giuseppe Greco,Marilena Vivona,R. Lo Nigro,Filippo Giannazzo,Alfonso Patti,Mario Saggio +7 more
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TLDR
In this article, the authors reviewed some recent advances in dielectrics technology currently adopted to optimize the performances of SiC and gallium nitride transistors, focusing on the optimization of SiO2/SiC interfaces in 4H-SiC MOSFETs by passivation processes of the gate oxides.About:
This article is published in Applied Surface Science.The article was published on 2014-05-15. It has received 132 citations till now. The article focuses on the topics: Gallium nitride & Leakage (electronics).read more
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Journal ArticleDOI
Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs
Helong Li,Stig Munk-Nielsen,Xiongfei Wang,Ramkrishan Maheshwari,Szymon Beczkowski,Christian Uhrenfeldt,W.-Toke Franke +6 more
TL;DR: In this article, the influence of device and circuit mismatches on paralleling the silicon carbide (SiC) MOSFETs is investigated and experimentally evaluated for the first time.
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Insulated gate and surface passivation structures for GaN-based power transistors
TL;DR: In this paper, the authors describe critical issues and problems including leakage current, current collapse and threshold voltage instability in high-electron-mobility transistors (HEMTs) using oxides, nitrides and high-κ dielectrics.
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Review of technology for normally-off HEMTs with p-GaN gate
TL;DR: In this paper, the most relevant technological issues for normally-off HEMTs with a p-GaN gate are discussed, including the operation principle and the impact of the heterostructure parameters.
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A review of DC/DC converter-based electrochemical impedance spectroscopy for fuel cell electric vehicles
TL;DR: In this article, a comparison analysis of high voltage gain DC/DC boost converters for fuel cell electric vehicles applications is presented, and some comments and guidelines regarding integration issues are also provided.
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State of the art on gate insulation and surface passivation for GaN-based power HEMTs
TL;DR: In this article, the effect of electronic states at insulator-semiconductor interfaces on current linearity of GaN MIS-HEMTs has been discussed and effective surface passivation schemes in conjunction with field-plate structures and emerging device structures utilizing multi-nanochannels under the gate region.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
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The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
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30-W/mm GaN HEMTs by field plate optimization
Yifeng Wu,Adam William Saxler,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,T. Wisleder,Umesh K. Mishra,P. Parikh +8 more
TL;DR: In this article, a GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance, and an enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages.
Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.