G
Gaudenzio Meneghesso
Researcher at University of Padua
Publications - 770
Citations - 15715
Gaudenzio Meneghesso is an academic researcher from University of Padua. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 51, co-authored 703 publications receiving 12567 citations. Previous affiliations of Gaudenzio Meneghesso include Applied Materials & STMicroelectronics.
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
Journal ArticleDOI
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
Giovanni Verzellesi,Davide Saguatti,Matteo Meneghini,Francesco Bertazzi,Michele Goano,Gaudenzio Meneghesso,Enrico Zanoni +6 more
TL;DR: In this article, the authors classified and reviewed the physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes and remedies proposed for droop mitigation.
Journal ArticleDOI
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
Davide Bisi,Matteo Meneghini,Carlo De Santi,Alessandro Chini,Michael Dammann,Peter Brückner,Michael Mikulla,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this paper, the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation.
Journal ArticleDOI
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
Gaudenzio Meneghesso,Giovanni Verzellesi,R. Pierobon,Fabiana Rampazzo,Alessandro Chini,Umesh K. Mishra,C. Canali,Enrico Zanoni +7 more
TL;DR: In this paper, the authors investigated drain current dispersion effects in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements.