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Arpun R. Nagaraja

Researcher at Northwestern University

Publications -  9
Citations -  423

Arpun R. Nagaraja is an academic researcher from Northwestern University. The author has contributed to research in topics: Electron mobility & Crystal structure. The author has an hindex of 8, co-authored 9 publications receiving 382 citations.

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Theoretical Prediction and Experimental Realization of New Stable Inorganic Materials Using the Inverse Design Approach

TL;DR: Experimental synthesis of TaCoSn, the first ternary in the Ta-Co-Sn system, confirmed its predicted zincblende-derived crystal structure and demonstrated how discovery of new materials can be accelerated by the combination of high-throughput theoretical and experimental methods.
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Design and discovery of a novel half-Heusler transparent hole conductor made of all-metallic heavy elements

TL;DR: The search theoretically for electronic structures that simultaneously lead to optical transparency while accommodating intrinsic defect structures that produce uncompensated free holes leads to the prediction of a stable, never before synthesized TaIrGe compound made of all-metal heavy atom compound.
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Li-doped Cr2MnO4: A new p-type transparent conducting oxide by computational materials design

TL;DR: In this paper, an inverse design approach is formulated to accelerate the design and discovery of novel functional materials, such as p-type transparent conducting oxides, by articulating the target properties and selecting an initial pool of candidates based on design principles.
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Band or Polaron: The Hole Conduction Mechanism in the p-Type Spinel Rh2ZnO4

TL;DR: In this paper, the authors discuss the traditional vs. new methodologies of determining the type of conduction mechanism at play, namely localized polaronic vs. band-like transport.
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Self-Doping and Electrical Conductivity in Spinel Oxides: Experimental Validation of Doping Rules

TL;DR: In this article, the authors present experimental evidence on two prototype spinels for each major doping type (DT1 and DT4) that test the first-principle calculations and show that the anti-site defects in a stoichiometric film are equal in concentration and compenstate each other.