A
Augusto Tazzoli
Researcher at Carnegie Mellon University
Publications - 88
Citations - 1922
Augusto Tazzoli is an academic researcher from Carnegie Mellon University. The author has contributed to research in topics: Electrostatic discharge & Gallium nitride. The author has an hindex of 19, co-authored 88 publications receiving 1815 citations. Previous affiliations of Augusto Tazzoli include University of Padua & University of Pennsylvania.
Papers
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Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
Journal ArticleDOI
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs
TL;DR: In this article, failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LEDs) are reviewed, and specific degradation mechanisms of state-of-the-art LED structures are analyzed.
Journal ArticleDOI
Reliability issues of Gallium Nitride High Electron Mobility Transistors
Gaudenzio Meneghesso,Matteo Meneghini,Augusto Tazzoli,Nicolo Ronchi,Antonio Stocco,Alessandro Chini,Enrico Zanoni +6 more
TL;DR: In this article, the authors review the most recent degradation modes and mechanisms observed in AlGaN/GaN, as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures.
Proceedings ArticleDOI
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
A. Sozza,Christian Dua,Erwan Morvan,M.-A. diForte-Poisson,Sylvain Delage,Fabiana Rampazzo,Augusto Tazzoli,F. Danesin,Gaudenzio Meneghesso,Enrico Zanoni,Arnaud Curutchet,Nathalie Malbert,Nathalie Labat,B. Grimbert,J.-C. De Jaeger +14 more
TL;DR: In this paper, a longterm 3000-hour test under on-state conditions (VDS = 25V, 6W/mm constant dissipated power) and off-state condition (V DS=46V, VGS=-6V) on GaN/AlGaN/GaN HEMTs is presented.
Proceedings ArticleDOI
A review of failure modes and mechanisms of GaN-based HEMTs
Enrico Zanoni,Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Matteo Meneghini,Fabiana Rampazzo,Augusto Tazzoli,Franco Zanon +7 more
TL;DR: Failure modes and mechanisms of AlGaN/GaN HEMTs, observed during accelerated tests at various bias conditions are reviewed in this paper, where failure modes and failure mechanisms are discussed.