F
Fabiana Rampazzo
Researcher at University of Padua
Publications - 63
Citations - 1726
Fabiana Rampazzo is an academic researcher from University of Padua. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 17, co-authored 55 publications receiving 1563 citations.
Papers
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Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
Journal ArticleDOI
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
Gaudenzio Meneghesso,Giovanni Verzellesi,R. Pierobon,Fabiana Rampazzo,Alessandro Chini,Umesh K. Mishra,C. Canali,Enrico Zanoni +7 more
TL;DR: In this paper, the authors investigated drain current dispersion effects in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements.
Journal ArticleDOI
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs
TL;DR: In this paper, an analysis of ON-state and OFF-state high-electric-field stress results for unpassivated GaN/AlGaN/GaN high-electron-mobility transistors on SiC substrates is presented.
Proceedings ArticleDOI
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
A. Sozza,Christian Dua,Erwan Morvan,M.-A. diForte-Poisson,Sylvain Delage,Fabiana Rampazzo,Augusto Tazzoli,F. Danesin,Gaudenzio Meneghesso,Enrico Zanoni,Arnaud Curutchet,Nathalie Malbert,Nathalie Labat,B. Grimbert,J.-C. De Jaeger +14 more
TL;DR: In this paper, a longterm 3000-hour test under on-state conditions (VDS = 25V, 6W/mm constant dissipated power) and off-state condition (V DS=46V, VGS=-6V) on GaN/AlGaN/GaN HEMTs is presented.
Proceedings ArticleDOI
Reliability and failure analysis in power GaN-HEMTs: An overview
Matteo Meneghini,Isabella Rossetto,Carlo De Santi,Fabiana Rampazzo,Alaleh Tajalli,A. Barbato,Maria Ruzzarin,Matteo Borga,E. Canato,Enrico Zanoni,Gaudenzio Meneghesso +10 more
TL;DR: In this paper, the degradation of GaN-based power HEMTs was investigated in the case of high off-state and high positive gate voltages, and the results of three different case studies were presented.