B. Dierickx

TL;DR: In this article, a pixel structure for CMOS imaging applications, the pixel structure including a photosensitive element, a load transistor in series with the photo-sensitive element, and a first reading transistor, coupled to the photo sensitive element and to the load transistor, was presented.

TL;DR: An asynchronous version of a binary pixel readabout circuit has been implemented in an array with 16 columns at 500 mu m pitch and 63 rows at 75 mm m pitch in this paper.

TL;DR: In this article, a model is proposed that explains both the transient and kink behavior of MOS transistors, based on the forced formation of the depletion layer caused by the avalanche-generated substrate current.

TL;DR: In this paper, a method for determining an estimate of statistical properties of an electronic system comprising individual components subject to manufacturing process variability is disclosed, which comprises obtaining statistical properties such as the performance of individual components of the electronic system, obtaining information about execution of an application on the system, simulating execution of the application based on the obtained information about executing an application in the system for a simulated electronic system realization constructed by selecting individual components with the obtained statistical properties.

TL;DR: An XY-addressable image architecture based on this pixel was implemented in silicon and the logarithmic response will be quantified using a more general signal to noise ratio.