Showing papers by "Barry Miller published in 1994"
TL;DR: In this article, a theoretical analysis and experimental measurements of broadband optical wavelength conversion by four-wave mixing in semiconductor traveling-wave amplifiers are presented, where both up and down-conversion efficiencies are measured as a function of wavelength shift for shifts up to 27 nm.
Abstract: We present a theoretical analysis and experimental measurements of broadband optical wavelength conversion by four-wave mixing in semiconductor traveling-wave amplifiers. In the theoretical analysis, we obtain an analytical expression for the conversion efficiency. In the experiments, both up and down-conversion efficiencies are measured as a function of wavelength shift for shifts up to 27 nm. The experimental data are well explained by the theoretical calculation. The observed higher conversion efficiency for wavelength down-conversion is believed to be caused by phase interferences that exist between various mechanisms contributing to the four-wave mixing process. >
142 citations
TL;DR: In this paper, the authors demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors.
Abstract: We demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The technique of wafer fusion allows for integration of GaAs/AlAs mirrors with InP double heterostructures without degradation of device performance, despite a 3.7% lattice mismatch between the wafers. The wafer fused VCLs have the lowest threshold current (9 mA) and lowest threshold current density (9.5 kA/cm2) and the highest characteristic temperature (T0=67 K) reported to date of any room‐temperature long wavelength VCL.
130 citations
TL;DR: In this paper, the efficiency of broadband optical wavelength conversion by four-wave mixing in semiconductor traveling-wave amplifiers is measured for wavelength shifts up to 65 nm using a tandem amplifier geometry.
Abstract: The efficiency of broadband optical wavelength conversion by four-wave mixing in semiconductor traveling-wave amplifiers is measured for wavelength shifts up to 65 nm using a tandem amplifier geometry. A quantity we call the relative conversion efficiency function, which determines the strength of the four-wave mixing nonlinearity, was extracted from the data. Using this quantity, gain requirements for lossless four-wave mixing wavelength conversion are calculated and discussed. Signal to background noise ratio is also measured and discussed in this study. >
129 citations
TL;DR: In this paper, a 1/spl times/N waveguide grating multiplexer connected to N optical amplifiers is demonstrated, which is very useful for WDM systems because it is capable of producing a comb of precisely spaced frequencies.
Abstract: A novel monolithic semiconductor laser is demonstrated. The optical cavity comprises a 1/spl times/N waveguide grating multiplexer connected to N optical amplifiers. By driving a specific output port, laser oscillation is obtained at the wavelength determined by the wavelength path through the multiplexer. Such a laser is very useful for WDM systems because it is capable of producing a comb of precisely spaced frequencies. >
88 citations
TL;DR: In this article, the In/sub 0.53/As/InP epitaxial layer was inserted into a microcavity composed of a GaAs/AlAs quarterwavelength stack (QWS) and a Si/SiO/sub 2/ dielectric mirror.
Abstract: We demonstrate greater than 90% quantum efficiency in an In/sub 0.53/Ga/sub 0.47/As photodetector with a thin (900 /spl Aring/) absorbing layer. This was achieved by inserting the In/sub 0.53/Ga/sub 0.47/As/InP epitaxial layer into a microcavity composed of a GaAs/AlAs quarter-wavelength stack (QWS) and a Si/SiO/sub 2/ dielectric mirror. The 900-/spl Aring/-thick In/sub 0.53/Ga/sub 0.47/As layer was wafer fused to a GaAs/AlAs mirror, having nearly 100% power reflectivity. A Si/SiO/sub 2/ dielectric mirror was subsequently deposited onto the wafer-fused photodiode to form an asymmetric Fabry-Perot cavity. The external quantum efficiency and absorption bandwidth for the wafer-fused RCE photodiodes were measured to be 94/spl plusmn/3% and 14 nm, respectively. To our knowledge, these wafer-fused RCE photodetectors have the highest external quantum efficiency and narrowest absorption bandwidth ever reported on the long-wavelength resonant-cavity-enhanced photodetectors. >
44 citations
TL;DR: Using tensile-strained InGaAs/InGaAsP multiple quantum well material to increase the gain bandwidth, this paper demonstrated a tuning range of 74.4 nm with sidemode-suppression ratio of ≳25 dB and as high as 34 dB in a broadly tunable vertical-coupler filtered laser at 1.55 μm.
Abstract: Using tensile‐strained InGaAs/InGaAsP multiple quantum well material to increase the gain bandwidth, we demonstrate a tuning range of 74.4 nm with sidemode‐suppression ratio of ≳25 dB and as high as 34 dB in a broadly tunable vertical‐coupler filtered laser at 1.55 μm. Due to its wide gain bandwidth and significant gain‐peak shift to shorter wavelengths with gain current increase, the tensile‐strained quantum well material is well suited for broadly tunable lasers.
43 citations
TL;DR: In this paper, a rotating disk electrode is modeled as a self-supporting diamond matrix with simple masking, which allows precise definition of the area to be plated within the insulating diamond matrix.
Abstract: Selective implantation of 140 keV Co ions into self-supporting diamond films converts the surface into a conductive region at which redox electron transfer and metal deposition have been accomplished. Simple masking allows precise definition of the area to be plated within the insulating diamond matrix. Formation and electrochemical characterization of a rotating disk electrode in this manner are demonstrated.
38 citations
TL;DR: In this article, a polarization-insensitive optical bandpass filter in indium phosphide (InP) with a 3 dB bandwidth of 1.5 nm at a center wavelength of 1498 μm is presented.
Abstract: We demonstrate a polarization‐insensitive optical bandpass filter in indium phosphide (InP) with a 3 dB bandwidth of 1.5 nm at a center wavelength of 1.498 μm. The 5‐mm‐long filter is based on a grating‐assisted vertical directional coupler and features a novel double‐periodic coupling grating.
28 citations
TL;DR: In this article, an electroabsorption modulator operating at 1.55 mu m wavelength, which is integrated with passive waveguide gradually tapered spotsize transformers allowing a low loss coupling to cleaved flat optical fibres.
Abstract: The authors demonstrate an electroabsorption modulator operating at 1.55 mu m wavelength, which is integrated with passive waveguide gradually tapered spotsize transformers allowing a low loss coupling to cleaved flat optical fibres. The modulator has 10.1 dB total fibre to fibre insertion loss with 15 dB extinction ratio and 300 AA spectral range. The modulator polarisation sensitivity is lower than 0.5 dB. >
21 citations
TL;DR: In this paper, an electroabsorption modulator integrated with a DBR laser and driven with a dual gate FET forms a transform-limited, wavelength-tunable soliton transmitter.
Abstract: An electroabsorption modulator integrated with a DBR laser and driven with a dual gate FET forms a transform-limited, wavelength-tunable soliton transmitter. Back-to-back bit error rate measurements at 2.5 Gbit/s are reported.
18 citations
TL;DR: In this article, the authors report progress on several practical issues of near field holographic (NFH) printing for optoelectronic applications, including adaptation of the mask making process to large area holographically generated grating masks, evaluation of a commercially available UV contact aligner modified to allow routine NFH printing, use of mask copies to avoid excessive wear on original masks, and options for reducing the writing time for e-beam generated GRating masks.
Abstract: We report progress on several practical issues of near field holographic (NFH) printing for optoelectronic applications. In particular, we report on the following: adaptation of the mask making process to large area holographically generated grating masks; evaluation of a commercially available UV contact aligner modified to allow routine NFH printing; use of mask copies to avoid excessive wear on original masks; options for reducing the writing time for e‐beam generated grating masks; and the application of e‐beam generated grating masks to a DFB six‐laser array with 200‐GHz frequency channel separation.
TL;DR: In this article, the authors demonstrate for the first time broadband wavelength conversion with amplification by four-wave mixing in semiconductor travelling-wave optical amplifiers and verify the cubic dependence of wavelength conversion efficiency on the amplifier's single-pass optical gain.
Abstract: The authors demonstrate for the first time broadband wavelength conversion with amplification by four-wave mixing in semiconductor travelling-wave optical amplifiers and verify the cubic dependence of wavelength conversion efficiency on the amplifier's single-pass optical gain.
TL;DR: In this article, the interwell carrier transport in a semiconductor optical amplifier having a structure of alternating tensile and compressively strained quantum wells was studied by four-wave mixing at detuning frequencies up to 1 THz.
Abstract: Interwell carrier transport in a semiconductor optical amplifier having a structure of alternating tensile and compressively strained quantum wells was studied by four‐wave mixing at detuning frequencies up to 1 THz. A calculation of transbarrier transport efficiency is also presented to qualitatively explain the measured signal spectra.
TL;DR: In this paper, a photonic circuit with an optical preamplifier, a WDM filter and a fast photodetector integrated on the same chip is demonstrated, which yields narrow filter response (8 /spl Aring/ width at -3 dB) and high rejection ratio of 24 dB.
Abstract: We demonstrate a photonic circuit with an optical preamplifier, a WDM filter and a fast photodetector integrated on the same chip. The passive integrated filter is formed by an aspheric waveguide lens and a planar Bragg grating. This arrangements yields narrow filter response (8 /spl Aring/ width at -3 dB is demonstrated) and high rejection ratio of 24 dB. The optical preamplifier consisting of strained multi-quantum well layers provides sufficient amplification to overcome the passive losses. Response curves demonstrate net on-chip gain with low ripple. >
Proceedings Article•
08 May 1994
TL;DR: In this paper, the authors demonstrate a modulation scheme in which both data-encoding and pulse generation are achieved using a single, wavelength tunable, integrated semiconductor laser/modulator.
Abstract: We demonstrate a novel modulation scheme in which both data-encoding and pulse generation are achieved using a single, wavelength tunable, integrated semiconductor laser/modulator. Data-encoded, near-transform limited 66 ps pulses are obtained at 2.5 Gbit/s and BER performance is reported. >
TL;DR: In this paper, a 1.56 mu m DBR laser-electroabsorption modulator transmitter operating at 5.0 Gbit/s was used to achieve 192 km of conventional singlemode fiber transmission.
Abstract: Transmission over 192 km of conventional singlemode fibre is achieved using a packaged 1.56 mu m DBR laser-electroabsorption modulator transmitter operating at 5.0 Gbit/s. In an optically amplified system experiment, a dispersion penalty less than 0.5 dB at a bit error rate of 10/sup -9/ is measured. >
03 Aug 1994
TL;DR: In this article, the authors proposed a cross-saturation of gain and four-wave mixing (FWM) based wavelength conversion scheme for broadband multichannel light-wave systems.
Abstract: Wavelength conversion is recognized as an important function in future broadband multichannel lightwave systems [1], and several types of wavelength converters have been demonstrated, which can be broadly classified into those which use cross-saturation of gain and those which employ four-wave mixing (FWM) [2]-[7]. Various limitations, however, are inherent with most of these wavelength conversion techniques. Cross-saturation techniques are limited to strong input signals that employ ASK modulation at rates within the spontaneous rate. Among FWM based techniques, cavity-enhanced FWM in semiconductor lasers requires matching of input channels to the laser cavity resonances and speed is limited to a few Gb/s, corresponding to the resonance bandwidth. Wavelength converters based on FWM in dispersion-shifted fiber require long fiber lengths (10 km) to achieve sufficient conversion efficiencies.
TL;DR: In this article, a polarisation-insensitive 3 dB optical power splitter based on InP using free-space radiative input-output coupling is demonstrated, which is compatible with photonic integrated circuits.
Abstract: The authors have demonstrated a compact (70 µm free-space radiation length), potentially robust, broadband (1.53–1.56 µm), polarisation-insensitive 3 dB optical power splitter based on InP using free-space radiative input-output coupling. This passive, 3 dB splitter is compatible with photonic integrated circuits.
19 Sep 1994
TL;DR: In this paper, a diode laser and a laterally tapered beam expander waveguide were integrated to achieve a narrow beam divergence of 5/spl deg/spl times/7/spl degrees/m and a fiber alignment tolerance of /spl plusmn/2.6 /spl +mn/3.1 /spl mu/m laterally.
Abstract: Integration of a diode laser and a laterally tapered beam expander waveguide, results in narrow beam divergence of 5/spl deg//spl times/7/spl deg/, and record fiber alignment tolerance of /spl plusmn/2.6 /spl mu/m vertically and /spl plusmn/3.1 /spl mu/m laterally.
27 Mar 1994
TL;DR: In this paper, the authors describe the idea behind strain compensation and how it is important for high quality lasers and amplifiers, and compare X-ray rocking curves, photoluminescence, and lasing properties.
Abstract: We describe the idea behind strain compensation and how it is important for high quality lasers and amplifiers. Examples of compensated and uncompensated structures are compared in X-ray rocking curves, photoluminescence, and lasing properties. The unique properties of devices which use strain compensated compressive and/or tensile wells are described, such as wide band tunable lasers, large bandwidth amplifiers, and polarization independent amplifiers. >
20 Feb 1994
TL;DR: In this paper, a tunable DBR laser combined with a bulk electroabsorption (EA) modulator operating at a 2.5 Gbit/s, showed the capability for error-free transmission over 674 km of conventional singlemode fiber.
Abstract: The integration of distributed-Bragg-reflector (DBR) lasers or distributed-feedback (DFB) lasers with semiconductor modulators has proven to be a successful approach for providing a compact, low-chirp source for long-haul optical-communication systems at multigigabit-per-second rates.1 Recently, a tunable DBR laser, combined with a bulk electroabsorption (EA) modulator operating at a 2.5 Gbit/s, showed the capability for error-free transmission over 674 km of conventional singlemode fiber.2
19 Sep 1994
TL;DR: In this paper, the authors demonstrate a modulation scheme in which both data-encoding and pulse generation are achieved using a single integrated semiconductor laser/modulator, achieving near-transform limited 66 ps pulses at 2.5 Gbit/s and BER performance was reported.
Abstract: Summary form only given. We demonstrate a novel modulation scheme in which both data-encoding and pulse generation are achieved using a single integrated semiconductor laser/modulator. Data-encoded, near-transform limited 66 ps pulses are obtained at 2.5 Gbit/s and BER performance is reported.
17 Feb 1994
TL;DR: In this paper, an integrated DBR laser and bulk electroabsorption modulator was used to produce 25 ps transform-limited pulses at a repetition rate of 10 GHz over a 6.5 nm wavelength range near 1.55 μm.
Abstract: The integrated laser-modulator has become a very attractive, compact source for future applications in high bit rate optical communication systems which require single frequency, low chirp performance. Recently, picosecond soliton pulse generation using sinusoidally driven electroabsorption modulators has been reported using both discrete [1,2] and integrated modulators [3,4], This technique provides flexible repetition rate operation and reduced complexity when compared with mode-locked fiber ring lasers or external cavity semiconductor lasers. Additional functionality is attained if the source is wavelength tunable, leading to potential application in wavelength division multiplexed (WDM) systems or single channel systems designed to operate at an optimum wavelength. Integrating a distributed Bragg reflector (DBR) laser with the semiconductor modulator enables electrical wavelength tuning to be achieved [5]. Here, we report an integrated DBR laser and bulk electroabsorption modulator which produces 25 ps transform-limited pulses at a repetition rate of 10 GHz over a 6.5 nm wavelength range near 1.55 μm.
31 Oct 1994
TL;DR: In this article, the output of a CW laser is converted to nearly transform limited pulses by a sinusoidally driven electro-absorption modulator, which is readily integrated and provides flexibility in both operating frequency and wavelength.
Abstract: The generation of short optical pulses at 1.5 /spl mu/m is a key issue in future communications systems. Recently, a new approach to pulse generation has been reported in which the output ofa CW laser is converted to nearly transform limited pulses by a sinusoidally driven electro-absorption modulator. This simple technique is readily integrated and provides flexibility in both operating frequency and wavelength, an important asset for soliton and optical time division multiplexing (OTDM) applications.
17 Feb 1994
TL;DR: This paper presents a new generation of WDM receivers, which optically demultiplex the different channels before detecting them with photodetectors and could be used as a fast tunable receiver in an all-optical network.
Abstract: Wavelength division multiplexing (WDM) is capable of tremendously increasing the throughput capacity of fiber transmission lines. It can also be used to build all-optical networks (1). To receive the individual channels, these systems employ WDM receivers, which optically demultiplex the different channels before detecting them with photodetectors. Together with an electronic switch array, such a device could also be used as a fast tunable receiver in an all-optical network (2).
Proceedings Article•
08 May 1994
25 Jul 1994
TL;DR: In this paper, the authors used ultra-fast four-wave mixing dynamics associated with intraband relaxation mechanisms in semiconductor traveling-wave amplifiers (TWA's) to demonstrate broad-band wavelength conversion over spans as large as 65 nm.
Abstract: Wavelength conversion is recognized as an important function in future fiber networks employing wavelength division multiplexing. The authors have recently demonstrated broad-band wavelength conversion over spans as large as 27 nm. Their approach uses ultra-fast four-wave mixing dynamics associated with intraband relaxation mechanisms in semiconductor traveling-wave amplifiers (TWA's). In the paper the authors present new results showing conversion over wavelength spans as large as 65 nm. This surpasses the previous record by over a factor of two. Of equal importance, they also verify experimentally their previous theoretical prediction that wavelength conversion efficiency varies as the cube of TWA single pass gain. >
19 Sep 1994
TL;DR: In this paper, the authors describe the performance of an integrated device which combines a fast frequency switching laser, and an external electroabsorption modulator for data encoding, on the same semiconductor chip.
Abstract: Summary form only given. In the present work we describe the performance of an integrated device which combines a fast frequency switching laser, and an external electroabsorption modulator for data encoding, on the same semiconductor chip. This device has applications in WDM switching and routing networks.