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Behzad Ebrahimi
Researcher at Islamic Azad University
Publications - 43
Citations - 403
Behzad Ebrahimi is an academic researcher from Islamic Azad University. The author has contributed to research in topics: Static random-access memory & Voltage. The author has an hindex of 12, co-authored 43 publications receiving 403 citations. Previous affiliations of Behzad Ebrahimi include University of Tehran.
Papers
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Journal ArticleDOI
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20nm FinFET technologies
M. H. Ansari,Hassan Afzali-Kusha,Behzad Ebrahimi,Zainalabedin Navabi,Ali Afzali-Kusha,Massoud Pedram +5 more
TL;DR: The proposed 7T SRAM cell with differential write and single ended read operations working in the near-threshold region is proposed and may be considered as one of the better design choices for both high performance and low power applications.
Journal ArticleDOI
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement
TL;DR: A near-triangular buried-oxide partial silicon-on-insulator (TB-PSOI) lateral double-diffused MOS field-effect transistor is proposed, which includes the addition of a new peak in the electric field in comparison to that of the conventional PSOI.
Journal ArticleDOI
Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage
TL;DR: An optimal approach for the design of 6-T FinFET-based SRAM cells is proposed, which considers the statistical distributions of gate length and silicon thickness and their corresponding statistical correlations due to process variations.
Proceedings ArticleDOI
Process variation study of Ground Plane SOI MOSFET
TL;DR: In this paper, the variations of the main characteristics in three SOI device structures due to channel length and thin-film thickness variations are investigated, and the results show that the GPS structure is more resistant against the variations when compared to the other two structures.
Proceedings ArticleDOI
Ground plane SOI MOSFET based SRAM with consideration of process variation
TL;DR: In this article, the characteristics of static random access memory (SRAM) cells based on three silicon-on-insulator (SOI) device structures are studied using device simulations.