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Bei Deng

Researcher at Southern University of Science and Technology

Publications -  27
Citations -  669

Bei Deng is an academic researcher from Southern University of Science and Technology. The author has contributed to research in topics: Density functional theory & Surface energy. The author has an hindex of 11, co-authored 27 publications receiving 465 citations. Previous affiliations of Bei Deng include The Chinese University of Hong Kong & City University of Hong Kong.

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2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy

TL;DR: Germanium phosphide (GeP), a new member of the Group IV-Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties.
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Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide

TL;DR: The results not only prove Ta2NiS5 is a promising in-plane anisotropic 2D material but also provide an interesting platform for future functionalized electronic devices.
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New approaches for calculating absolute surface energies of wurtzite (0001)/(000 1¯): A study of ZnO and GaN

TL;DR: In this article, the authors used a pseudo-hydrogen passivation method to estimate the dangling bond energy and calculate the polar surfaces of ZnO and GaN, based on pseudo chemical potentials obtained from a set of tetrahedral clusters or simple pseudo-molecules, using density functional theory approaches.
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Pseudo-Hydrogen Passivation: A Novel Way to Calculate Absolute Surface Energy of Zinc Blende (111)/(͞1 ͞1 ͞1) Surface.

TL;DR: In this paper, a pseudo-hydrogen passivation method was proposed to calculate the surface energy of polar surfaces of semiconductors, using density functional theory approaches, and the energy contribution from pseudo hydrogen was calculated using either a pseudo molecule method or a tetrahedral cluster method.
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Surface energy calculations from Zinc blende (111)/(-1-1-1) to Wurtzite (0001)/(000-1):a study of ZnO and GaN

TL;DR: In this article, the authors used a pseudo-hydrogen passivation method to estimate the dangling bond energy and calculate the polar surfaces of ZnO and GaN, based on the pseudo chemical potentials obtained from a set of tetrahedral clusters or simple pseudo-molecules.