Journal ArticleDOI
Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide
Liang Li,Penglai Gong,Weike Wang,Bei Deng,Lejing Pi,Jing Yu,Xing Zhou,Xingqiang Shi,Huiqiao Li,Tianyou Zhai,Tianyou Zhai +10 more
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TLDR
The results not only prove Ta2NiS5 is a promising in-plane anisotropic 2D material but also provide an interesting platform for future functionalized electronic devices.Abstract:
An interesting in-plane anisotropic layered dimetal chalcogenide Ta2NiS5 is introduced, and the optical and electrical properties with respect to its in-plane anisotropy are systematically studied. The Raman vibration modes have been identified by Raman spectra measurements combined with calculations of phonon-related properties. Importantly, the Ta2NiS5 flakes exhibit strong anisotropic Raman response under the angle-resolved polarized Raman spectroscopy measurements. We found that Raman intensities of the Ag mode not only depend on rotation angle but are also related to the sample thickness. In contrast, the infrared absorption with light polarized along the a axis direction is always larger than that in the c axis direction regardless of thickness under the polarization-resolved infrared spectroscopy measurements. Remarkably, the first-principles calculations combined with angle-resolved conductance measurements indicate strong anisotropic conductivity of Ta2NiS5. Our results not only prove Ta2NiS5 is ...read more
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Emerging in-plane anisotropic two-dimensional materials
Liang Li,Liang Li,Wei Han,Lejing Pi,Ping Niu,Junbo Han,Chengliang Wang,Bin Su,Huiqiao Li,Jie Xiong,Yoshio Bando,Yoshio Bando,Tianyou Zhai +12 more
Journal ArticleDOI
Recent Advances in the Functional 2D Photonic and Optoelectronic Devices
Journal ArticleDOI
2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy
Liang Li,Weike Wang,Penglai Gong,Xiangde Zhu,Bei Deng,Xingqiang Shi,Guoying Gao,Huiqiao Li,Tianyou Zhai,Tianyou Zhai +9 more
TL;DR: Germanium phosphide (GeP), a new member of the Group IV-Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties.
Journal ArticleDOI
Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity.
TL;DR: 2D GeSe possesses black phosphorous‐analog‐layered structure and shows excellent environmental stability, as well as highly anisotropic in‐plane properties, and shows strong polarization‐dependent photoresponse with a peak/valley ratio of 1.3.
References
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