Bertrand Szelag

TL;DR: In this paper, a review of the open-access silicon and silicon nitride photonic IC technologies offered by the pilot lines of European research institutes and companies is presented, highlighting upcoming features of these platforms and discusses how they address the long-term market needs.

TL;DR: This work designs, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics.

TL;DR: In this article, the integration of silicon nitride (SiN) material to extend the capabilities of the silicon photonics platform is presented, where the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use with SiN to realize optical phased arrays in the 800-1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications.

TL;DR: Two-dimensional beam steering in the near-infrared using a SiN integrated circuit, containing optical phased arrays, achieved over a range of 17.6° × 3°, at a fixed wavelength of 905 nm.

TL;DR: In this article, the authors report on the high data-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon junction operating under low reverse bias at 1.55μm.