Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction.
Léopold Virot,Daniel Benedikovic,Bertrand Szelag,Carlos Alonso-Ramos,Bayram Karakus,Jean-Michel Hartmann,Xavier Le Roux,P. Crozat,Eric Cassan,Delphine Marris-Morini,Charles Baudot,Frederic Boeuf,Jean-Marc Fedeli,Christophe Kopp,Laurent Vivien +14 more
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TLDR
This work designs, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics.Abstract:
Germanium photodetectors are considered to be mature components in the silicon photonics device library. They are critical for applications in sensing, communications, or optical interconnects. In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions. This photodiode configuration takes advantage of the compatibility with contact process steps of silicon modulators, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics, viable for high-speed and efficient operation near 1.55 μm wavelengths. More specifically, we experimentally obtained at a reverse voltage of 1V a dark current lower than 10 nA, a responsivity higher than 1.1 A/W, and a 3 dB opto-electrical cut-off frequency over 50 GHz. The combined benefits of decreased process complexity and high-performance device operation pave the way towards attractive integration strategies to deploy cost-effective photonic transceivers on silicon-on-insulator substrates.read more
Citations
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Review of Silicon Photonics Technology and Platform Development
S. Y. Siew,Bo Li,Feng Gao,H. Y. Zheng,Wei Zhang,P. Guo,S. W. Xie,A. Song,B. Dong,L. W. Luo,Chao Li,Xianshu Luo,Guo-Qiang Lo +12 more
TL;DR: In this article, the authors provide a comprehensive review of the development of silicon photonics and the foundry services which enable the productization, including various efforts to develop and release PDK devices.
Journal ArticleDOI
Germanium-based integrated photonics from near- to mid-infrared applications
Delphine Marris-Morini,Vladyslav Vakarin,Joan Manel Ramirez,Qiankun Liu,Andrea Ballabio,Jacopo Frigerio,Miguel Montesinos,Carlos Alonso-Ramos,Xavier Le Roux,Samuel Serna,Daniel Benedikovic,Daniel Chrastina,Laurent Vivien,Giovanni Isella +13 more
TL;DR: Germanium has played a key role in silicon photonics as an enabling material for datacom applications as discussed by the authors, and the unique properties of Ge have been leveraged to develop high performance integrated photodectors, which are now mature devices.
Journal ArticleDOI
Open-Access Silicon Photonics Platforms in Europe
Abdul Rahim,Jeroen Goyvaerts,Bertrand Szelag,Jean-Marc Fedeli,Philippe Absil,Timo Aalto,Mikko Harjanne,Callum G. Littlejohns,Graham T. Reed,Georg Winzer,Stefan Lischke,Lars Zimmermann,D. Knoll,Douwe Geuzebroek,Arne Leinse,Michael Geiselmann,Michael Zervas,Hilde Jans,Andim Stassen,Carlos Domínguez,Pascual Muñoz,David Domenech,Anna Lena Giesecke,Max C. Lemme,Roel Baets +24 more
TL;DR: In this paper, a review of the open-access silicon and silicon nitride photonic IC technologies offered by the pilot lines of European research institutes and companies is presented, highlighting upcoming features of these platforms and discusses how they address the long-term market needs.
Journal ArticleDOI
Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz
Stefan Lischke,Anna Peczek,Jesse S. Morgan,Keye Sun,Daniel Steckler,Yuji Yamamoto,F. Korndorfer,Christian Mai,Steffen Marschmeyer,Mirko Fraschke,A. Kruger,Andreas Beling,Lars Zimmermann,Lars Zimmermann +13 more
TL;DR: In this paper, a waveguide-coupled germanium photodiode with a 3-dB bandwidth of 265 GHz and 240 GHz at a photocurrent of 1 mA is presented.
Journal ArticleDOI
A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications
Quentin Wilmart,Houssein El Dirani,Nicola A. Tyler,Daivid Fowler,Stephane Malhouitre,Stephanie Garcia,Marco Casale,Sebastien Kerdiles,Karim Hassan,Christelle Monat,Xavier Letartre,A. N. Kamel,Minhao Pu,Kresten Yvind,Leif Katsuo Oxenløwe,Wilfried Rabaud,Corrado Sciancalepore,Bertrand Szelag,Segolene Olivier +18 more
TL;DR: In this article, the integration of silicon nitride (SiN) material to extend the capabilities of the silicon photonics platform is presented, where the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use with SiN to realize optical phased arrays in the 800-1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications.
References
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Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
Journal ArticleDOI
Roadmap on silicon photonics
David J. Thomson,Aaron Zilkie,John E. Bowers,Tin Komljenovic,Graham T. Reed,Laurent Vivien,Delphine Marris-Morini,Eric Cassan,Léopold Virot,Jean-Marc Fedeli,J. M. Hartmann,Jens H. Schmid,Dan-Xia Xu,Frederic Boeuf,Peter O'Brien,Goran Z. Mashanovich,Milos Nedeljkovic +16 more
TL;DR: In this article, the authors provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths.
Journal ArticleDOI
42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide
Laurent Vivien,Johann Osmond,Jean-Marc Fedeli,Delphine Marris-Morini,Paul Crozat,Jean-Francois Damlencourt,Eric Cassan,Y. Lecunff,Suzanne Laval +8 more
TL;DR: A compact pin Ge photodetector is integrated in submicron SOI rib waveguide using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm.
Journal ArticleDOI
Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.
Laurent Vivien,A. Polzer,Delphine Marris-Morini,Johann Osmond,Jean-Michel Hartmann,Paul Crozat,Eric Cassan,Christophe Kopp,Horst Zimmermann,Jean-Marc Fedeli +9 more
TL;DR: A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors selectively grown at the end of silicon waveguides using three kinds of experimental set-ups.
Journal ArticleDOI
Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current
Christopher T. DeRose,Douglas C. Trotter,William A. Zortman,Andrew Starbuck,Moz Fisher,Michael R. Watts,Paul Davids +6 more
TL;DR: The low intrinsic capacitance of this photodiode may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.