Soil Chemical Analysis

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Thin film solar cells (TFSC) are a promising approach for terrestrial and space photovoltaics and offer a wide variety of choices in terms of the device design and fabrication. A variety of substrates (flexible or rigid, metal or insulator) can be used for deposition of different layers (contact, buffer, absorber, reflector, etc.) using different techniques (PVD, CVD, ECD, plasma-based, hybrid, etc.). Such versatility allows tailoring and engineering of the layers in order to improve device performance. For large-area devices required for realistic applications, thin-film device fabrication becomes complex and requires proper control over the entire process sequence. Proper understanding of thin-film deposition processes can help in achieving high-efficiency devices over large areas, as has been demonstrated commercially for different cells. Research and development in new, exotic and simple materials and devices, and innovative, but simple manufacturing processes need to be pursued in a focussed manner. Which cell(s) and which technologies will ultimately succeed commercially continue to be anybody's guess, but it would surely be determined by the simplicity of manufacturability and the cost per reliable watt. Cheap and moderately efficient TFSC are expected to receive a due commercial place under the sun.

Thin-film solar cells: an overview

Photoelectrochemical (PEC) water splitting for hydrogen production is a promising technology that uses sunlight and water to produce renewable hydrogen with oxygen as a by-product. In the expanding field of PEC hydrogen production, the use of standardized screening methods and reporting has emerged as a necessity. This article is intended to provide guidance on key practices in characterization of PEC materials and proper reporting of efficiencies. Presented here are the definitions of various efficiency values that pertain to PEC, with an emphasis on the importance of solar-to-hydrogen efficiency, as well as a flow chart with standard procedures for PEC characterization techniques for planar photoelectrode materials (i.e., not suspensions of particles) with a focus on single band gap absorbers. These guidelines serve as a foundation and prelude to a much more complete and in-depth discussion of PEC techniques and procedures presented elsewhere.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0884291400005653

Accelerating materials development for photoelectrochemical hydrogen production: Standards for methods, definitions, and reporting protocols

Biomass pyrolysis kinetics: A comparative critical review with relevant agricultural residue case studies

Electrical transport properties of undoped polyaniline (Pani) and Pani doped with Fe, Ni and La ions (named Pani?Fe, Pani?Ni and Pani?La) have been investigated using dc and ac conductivity data. It is shown that the Pani?Fe sample follows 3D variable range hopping (VRH) conduction while the Pani, Pani?Ni and Pani?La samples follow 1D VRH conduction. These results are discussed by comparing with conventional HCl-doped Pani. Ac conductivity studies carried out in the frequency range 42?Hz?5?MHz reveal the influence of dopants on inter-chain interactions. The dielectric response exhibits two well resolved relaxation processes, which appear to indicate phase segregation of doped and undoped regions in the samples.

https://iopscience.iop.org/article/10.1088/0022-3727/42/9/095404/pdf

Electrical properties of polyaniline doped with metal ions

Fabrication of CdS/SnS heterostructured device using successive ionic layer adsorption and reaction deposited SnS

Structural, microstructural, magnetic and hyperfine characterization of nanosized Ni0.5Zn0.5Fe2O4 synthesized by high energy ball-milling method

Application of response surface method for predicting electroless nickel plating

Tin sulfide films of 0.20 µm thickness were grown on glass and ITO substrates by the successive ionic layer adsorption and reaction (SILAR) method using SnSO4 and Na2S solution. The as-grown films were well covered and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films and provided information on the crystallite size and residual strain of the thin films. FESEM revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDX showed that as-grown SnS films were slightly rich in tin component. High absorption in the visible region was evident from UV–Vis transmission spectra. PL studies were carried out with 550 nm photon excitation. To the best of our knowledge, however, no attempt has been made to fabricate a SnS thin film using the SILAR technique.

https://iopscience.iop.org/article/10.1088/0268-1242/23/12/125013/pdf

Biswajit Ghosh

Papers

Electrical properties of polyaniline doped with metal ions

Fabrication of CdS/SnS heterostructured device using successive ionic layer adsorption and reaction deposited SnS

Structural, microstructural, magnetic and hyperfine characterization of nanosized Ni0.5Zn0.5Fe2O4 synthesized by high energy ball-milling method

Application of response surface method for predicting electroless nickel plating

Fabrication of SnS thin films by the successive ionic layer adsorption and reaction (SILAR) method