Bo Han

TL;DR: In this paper, an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation, is presented.

TL;DR: The time-resolved photoluminescence measurements show that the neutral exciton spontaneous emission time can be tuned by one order of magnitude depending on the thickness of the surrounding hBN layers, which is in very good agreement with the calculated recombination rate in the weak exciton-photon coupling regime.

TL;DR: Emission from excited excitons in monolayers of transition metal dichalcogenides, which are ultrathin semiconductors, is more efficient than in conventional semiconductor as mentioned in this paper.

TL;DR: In this paper, the authors investigated the excited exciton states in metal dichalcogenides (TMDs) by photoluminescence upconversion spectroscopy for both monolayer materials and showed that encapsulation in hexagonal boron nitride results in emission line width of the A:1$s$ exciton below 1.5 meV and 3 meV, respectively.

TL;DR: This study investigates the pressure confinement effect on monolayer MoS2 by in situ high pressure Raman and photoluminescence (PL) measurements and reveals a structural deformation starting from 0.84 GPa, which is evidenced by the splitting of E(1)2g and A1g modes.