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T. Taniguchi

Researcher at National Institute for Materials Science

Publications -  135
Citations -  7684

T. Taniguchi is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 31, co-authored 118 publications receiving 5842 citations.

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Light-emitting diodes by bandstructure engineering in van der Waals heterostructures

TL;DR: It is shown that light-emitting diodes made by stacking metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully designed sequences can also provide the basis for flexible and semi-transparent electronics.
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STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride

TL;DR: In this article, the authors used scanning tunneling microscopy to show that placing graphene on hexagonal boron nitride (hBN) yields improved device performance and showed that placing the graphene on hBN improved the device performance.
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Intrinsic quantized anomalous Hall effect in a moir\'e heterostructure

TL;DR: In this paper, a quantum anomalous Hall effect was observed in twisted bilayer graphene showing Hall resistance quantized to within.1\% of the von Klitzing constant at zero magnetic field.
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Maximized electron interactions at the magic angle in twisted bilayer graphene

TL;DR: Scanning tunnelling spectroscopy is used to map the atomic-scale electronic structure of magic-angle twisted bilayer graphene, finding multiple signatures of electron correlations and thus providing insight into the sought-after mechanism behind superconductivity in graphene.
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Magic Angle Spectroscopy

TL;DR: In this paper, the atomic-scale structural and electronic properties of twisted bilayer graphene (TBLG) near the magic angle using scanning tunneling microscopy and spectroscopy (STM/STS).