C
C. Storey
Researcher at National Research Council
Publications - 28
Citations - 298
C. Storey is an academic researcher from National Research Council. The author has contributed to research in topics: Laser & Molecular beam epitaxy. The author has an hindex of 7, co-authored 26 publications receiving 263 citations.
Papers
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Journal ArticleDOI
Extracting coupling and loss coefficients from a ring resonator
W R. McKinnon,Dan-Xia Xu,C. Storey,E. Post,Adam Densmore,André Delâge,Philip Waldron,Jens H. Schmid,Siegfried Janz +8 more
TL;DR: It is shown how coupling and loss coefficients of ring resonators can be disentangled based on how they vary with wavelength or device parameters.
Journal ArticleDOI
Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing
TL;DR: In this article, singlemode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaSb triple quantum well active regions grown by molecular beam epitaxy.
Journal ArticleDOI
Wavelength-Dependent Model of a Ring Resonator Sensor Excited by a Directional Coupler
Andre Delage,Dan-Xia Xu,Ross McKinnon,E. Post,Philip Waldron,Jean Lapointe,C. Storey,Adam Densmore,Siegfried Janz,Boris Lamontagne,Pavel Cheben,Jens H. Schmid +11 more
TL;DR: In this paper, the spectral characteristics of a ring resonator made of Si photonic wires are modeled using mode expansion of supermodes of the directional coupler, and the influence of the coupling coefficient, loss factor and waveguide dispersion on the spectral features are analyzed in detail.
Journal ArticleDOI
Modal Gain of 2.4- $\mu$ m InGaAsSb–AlGaAsSb Complex-Coupled Distributed-Feedback Lasers
TL;DR: In this article, high-resolution spectroscopy was used to examine gain characteristics of Cr-grating complex-coupled distributedfeedback (DFB) lasers near 2.4 $\mu$ m.
Proceedings ArticleDOI
Single-mode 2.4μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing
James A. Gupta,Pedro Barrios,Jean Lapointe,Geof C. Aers,Daniel Poitras,C. Storey,Philip Waldron +6 more
TL;DR: In this article, single-mode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaSb triple quantum well active regions grown by molecular beam epitaxy.