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Cammy R. Abernathy
Researcher at University of Florida
Publications - 143
Citations - 5549
Cammy R. Abernathy is an academic researcher from University of Florida. The author has contributed to research in topics: Molecular beam epitaxy & Dry etching. The author has an hindex of 32, co-authored 143 publications receiving 5435 citations. Previous affiliations of Cammy R. Abernathy include Bell Labs.
Papers
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Journal ArticleDOI
Wide band gap ferromagnetic semiconductors and oxides
Stephen J. Pearton,Cammy R. Abernathy,M. E. Overberg,G. T. Thaler,David P. Norton,Nikoleta Theodoropoulou,Arthur F. Hebard,Yun Daniel Park,Fan Ren,Jihyun Kim,Lynn A. Boatner +10 more
TL;DR: In this paper, a review focusing on promising candidate materials (such as GaN, GaP and ZnO) is presented, where the introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature.
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Advances in wide bandgap materials for semiconductor spintronics
Stephen J. Pearton,Cammy R. Abernathy,David P. Norton,Arthur F. Hebard,Yun Daniel Park,Lynn A. Boatner,John D. Budai +6 more
TL;DR: In this article, the authors summarize recent progress in dilute magnetic semiconductors (DMS) such as (Ga, Mn)N, (Ga and Mn)P, (Zn, Mn), O, and SiGeN2 exhibiting room temperature ferromagnetic properties.
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Magnetic properties of n-GaMnN thin films
G. T. Thaler,M. E. Overberg,Brent P. Gila,R. M. Frazier,Cammy R. Abernathy,Stephen J. Pearton,Ju-Wan Lee,Sang-Bum Lee,Yun Daniel Park,Z. G. Khim,Jihyun Kim,Fan Ren +11 more
TL;DR: In this paper, a GaMnN thin film was synthesized using gas-source molecular-beam epitaxy and magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples.
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Magnetic and structural properties of Mn-implanted GaN
Nikoleta Theodoropoulou,Arthur F. Hebard,M. E. Overberg,Cammy R. Abernathy,Stephen J. Pearton,S. N. G. Chu,Robert G. Wilson +6 more
TL;DR: In this paper, high doses (1015−5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350°C and annealed at 700−1000°C.
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Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
S. R. Lee,A. M. West,Andrew A. Allerman,K. E. Waldrip,David M. Follstaedt,Paula P. Provencio,Daniel D. Koleske,Cammy R. Abernathy +7 more
TL;DR: In this article, a reciprocal space model was developed to describe the dependence of broadened Bragg peakwidths produced by x-ray diffraction from a dislocated epilayer.