C
Cheul Ro Lee
Researcher at Chonbuk National University
Publications - 65
Citations - 993
Cheul Ro Lee is an academic researcher from Chonbuk National University. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Thin film. The author has an hindex of 17, co-authored 65 publications receiving 880 citations. Previous affiliations of Cheul Ro Lee include Center for Advanced Materials & Korea Research Institute of Standards and Science.
Papers
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Journal ArticleDOI
Au@NiO core-shell nanoparticles as a p-type gas sensor: Novel synthesis, characterization, and their gas sensing properties with sensing mechanism
Sanjit Manohar Majhi,Sanjit Manohar Majhi,Gautam Kumar Naik,Hu Jun Lee,Ho Geun Song,Cheul Ro Lee,In Hwan Lee,Yeon-Tae Yu +7 more
TL;DR: In this paper, a p-type gas sensing material was synthesized by a facile wet-chemical method, and evaluated their gas sensing properties as compared to the pristine NiO NPs gas sensors.
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Stress relaxation in Si-doped GaN studied by Raman spectroscopy
In Hwan Lee,In Hoon Choi,Cheul Ro Lee,Eun-joo Shin,Dongho Kim,Sam Kyu Noh,Sung Jin Son,Ki Yong Lim,Hyung Jae Lee +8 more
TL;DR: In this paper, the Si-doping-induced relaxation of residual stress in GaN epitaxial layers grown on (0001) sapphire substrate by the metalorganic vapor phase epitaxy technique was reported.
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Fast neutron irradiation effects in n-GaN
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,Stephen J. Pearton,N. G. Kolin,D. I. Merkurisov,V. M. Boiko,Cheul Ro Lee,In Hwan Lee +9 more
TL;DR: In this article, the electrical properties and deep level spectra in undoped n-GaN films irradiated by fast neutrons are reported, and the dominant deep states introduced by neutron damage were electron traps with activation energy of 0.75eV, close to the energy of the Fermi level pinning in heavily irradiated material.
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Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN
Eugene B. Yakimov,P. S. Vergeles,Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,In Hwan Lee,Cheul Ro Lee,Stephen J. Pearton +7 more
TL;DR: In this paper, spatial variations of donor concentration and diffusion length/lifetime were studied for epitaxial laterally overgrown undoped n-GaN samples by electron beam induced current (EBIC) and microcathodoluminescence (MCL).
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Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0 0 0 1)
TL;DR: In this article, a lens-shaped pattern was formed on the sapphire substrate to reduce threading dislocation (TD) density and also to improve the optical emission efficiency by internal reflection on the lens.