X. D. Chen

TL;DR: In this article, undoped and nitrogen-doped ZnO films were fabricated by plasma immersion ion implantation and deposition, and the transport properties of the undoped-ZnO∕p-Si and the N-drone-dope ZnNO√p-si diodes were explained in terms of the Anderson model and the space charge limited current model, respectively.

TL;DR: In this paper, the Au∕n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectrography, and deep level transient spectrograms, and the formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and formation of vacancy-type defects.

TL;DR: In this article, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration, and the best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of 10 �7 Ac m �2.

TL;DR: In this article, deep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6H-SiC after neutron irradiation, which have been detected in the temperature range of 100-450 K.

TL;DR: In this article, a deep level transient spectroscopy (DLTS) study has been performed on a GaN n+p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer.