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Chih-Yang Lin
Researcher at National Sun Yat-sen University
Publications - 87
Citations - 2887
Chih-Yang Lin is an academic researcher from National Sun Yat-sen University. The author has contributed to research in topics: Resistive random-access memory & Resistive touchscreen. The author has an hindex of 23, co-authored 87 publications receiving 2471 citations. Previous affiliations of Chih-Yang Lin include Chung Hua University & National Chiao Tung University.
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Journal ArticleDOI
Three-Dimensional Reconstruction of Brain-wide Wiring Networks in Drosophila at Single-Cell Resolution
Ann-Shyn Chiang,Ann-Shyn Chiang,Chih-Yung Lin,Chao Chun Chuang,Hsiu Ming Chang,Chang Huain Hsieh,Chang Wei Yeh,Chi-Tin Shih,Jian Jheng Wu,Guo Tzau Wang,Yung Chang Chen,Cheng Chi Wu,Guan-Yu Chen,Yu-Tai Ching,Ping Chang Lee,Chih-Yang Lin,Hui-Hao Lin,Chia Chou Wu,Hao Wei Hsu,Yun Ann Huang,Jing Yi Chen,Hsin Jung Chiang,Chun Fang Lu,Ru Fen Ni,Chao-Yuan Yeh,Jenn-Kang Hwang +25 more
TL;DR: It is found that the Drosophila brain is assembled from families of multiple LPUs and their interconnections, which provides an essential first step in the analysis of information processing within and between neurons in a complete brain.
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Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices
TL;DR: In this article, the influence of top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as a bottom electrode was investigated, and the reliability results, such as cycling endurance and continuous readout test, were also presented.
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Bistable Resistive Switching in Al2O3 Memory Thin Films
TL;DR: In this article, the resistive switching behavior of radio frequency (RF)-sputtered Al 2 O 3 thin films is investigated, and it is observed that both highconducting state (ON state) and low-conducting (OFF state) are stable and reproducible during successive resistive switchings by dc voltage sweeping.
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Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
TL;DR: In this paper, the influence of Ti top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as bottom electrode was investigated and the experimental results imply that switching the device into high conducting state is a field driven process while switching back into low conducting state was a current driven process.
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Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
TL;DR: In this article, the authors proposed a simple method to produce the various interface thicknesses within Ti/ZrO2 by changing the thickness of the Ti top electrode and found that when the interface layer is thick enough, it will trap sufficient charges to build up an opposite electric field to increase the forming voltage.