D. Vanhoenacker

TL;DR: In this article, N-type field effect transistors have been fabricated in a complementary metal oxide-semiconductor compatible thin-film silicon-on-insulator technology with titanium, cobalt, and nickel self-aligned silicide processes for lowvoltage, low-power microwave applications.

TL;DR: Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, the authors demonstrates that such a process with channel lengths of about 1 mum may emerge as a most promising and mature contender for integrated microsystems which must operate under lowvoltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350 degreesC.

TL;DR: In this paper, the microwave properties of arrays of parallel magnetic nanowires constituted of nickel, cobalt, or Ni/Fe alloy embedded in nanoporous track-etched polymer membranes were investigated.

TL;DR: In this paper, the high-frequency performances of microwave transistors fabricated using a standard fully-depleted SOI CMOS process are described, which are compatible with analog and digital circuits fabricated using the same low-cost process.

TL;DR: In this paper, the authors present a microstrip structure using a nanoscale porous substrate filled by a ferromagnetic material, forming an array of nanowires perpendicular to the ground plane.