Dario L. Goldfarb

TL;DR: In this article, a supercritical drying process was developed to eliminate the capillary forces naturally present during normal drying of photoresist materials, where supercritical carbon dioxide (scCO2), organic solvents and surfactants were used to prevent the collapse of high-aspect-ratio structures fabricated from aqueous-based photoresists.

TL;DR: In this paper, an atomic force microscopy is used to investigate the contribution of the imaging resist sidewall topography to the sidewall roughness of the final etched feature in thin photoresists, ARC and hardmasks.

TL;DR: A simple, zero adjustable parameter model consisting of a fixed water rich layer at the interface and bulk swelling through the remainder of the film was developed and found to reasonably correspond to the measured thickness dependent swelling.

TL;DR: This work demonstrates the use of x-ray and neutron reflectometry as a general method to measure the spatial evolution of the reaction-diffusion process with nanometer resolution and shows that the reaction front within the material is broad rather than sharply defined and the compositional profile is altered during development.

TL;DR: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry is described in this article, where the HFR-based chemistry terminates the semiconductors surface with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface.