K
Karen Petrillo
Researcher at IBM
Publications - 147
Citations - 1750
Karen Petrillo is an academic researcher from IBM. The author has contributed to research in topics: Resist & Extreme ultraviolet lithography. The author has an hindex of 20, co-authored 143 publications receiving 1680 citations. Previous affiliations of Karen Petrillo include SEMATECH & GlobalFoundries.
Papers
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Proceedings ArticleDOI
Evaluation of EUV resist materials for use at the 32 nm half-pitch node
Thomas Wallow,Craig Higgins,Robert L. Brainard,Karen Petrillo,Warren Montgomery,Chiew-seng Koay,Greg Denbeaux,Obert R. Wood,Yayi Wei +8 more
TL;DR: Progress is evident in all areas of EUV resist patterning, particularly contact/via and ultrathin resist film performance, and a simplified figure-of-merit approach is described useful for more quantitative assessment of the strengths and weaknesses of current materials.
Journal ArticleDOI
Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes
Dario L. Goldfarb,Arpan P. Mahorowala,Gregg M. Gallatin,Karen Petrillo,Karen Temple,Marie Angelopoulos,Stacy Rasgon,Herbert H. Sawin,Scott D. Allen,Margaret C. Lawson,Ranee W. Kwong +10 more
TL;DR: In this paper, an atomic force microscopy is used to investigate the contribution of the imaging resist sidewall topography to the sidewall roughness of the final etched feature in thin photoresists, ARC and hardmasks.
Journal ArticleDOI
Environmentally stable chemical amplification positive resist: principle, chemistry, contamination resistance, and lithographic feasibility
TL;DR: The ESCAP resist as mentioned in this paper consists of a copolymer of 4-hydroxystyrene with t-hutyl acrylate and N-ca mphorsulfonyloxynaphthalimide as a nonionic organic acid generator.
Proceedings ArticleDOI
The use of EUV lithography to produce demonstration devices
Bruno M. LaFontaine,Yunfei Deng,Ryoung-han Kim,Harry J. Levinson,Sarah N. McGowan,Uzodinma Okoroanyanwu,Rolf Seltmann,Cyrus E. Tabery,Anna Tchikoulaeva,Tom Wallow,Obert R. Wood,John C. Arnold,Don Canaperi,Matthew E. Colburn,Kurt R. Kimmel,Chiew-seng Koay,Erin Mclellan,Dave Medeiros,Satyavolu S. Papa Rao,Karen Petrillo,Yunpeng Yin,Hiroyuki Mizuno,Sander Bouten,Michael Crouse,Andre van Dijk,Youri van Dommelen,Judy Galloway,Sang-In Han,Bart Kessels,Brian Lee,Sjoerd Lok,Brian Niekrewicz,Bill Pierson,Robert Routh,Emil Schmit-Weaver,Kevin Cummings,James Word +36 more
TL;DR: In this paper, the integration of EUV lithography into a standard semiconductor manufacturing flow was described, and the resulting mask and the 0.25-NA full-field NN scanner were found to provide more than adequate performance for this 45 nm logic node demonstration.
Proceedings ArticleDOI
22 nm technology compatible fully functional 0.1 μm 2 6T-SRAM cell
Bala S. Haran,Amit Kumar,Lahir Shaik Adam,Josephine B. Chang,V. Basker,S. Kanakasabapathy,D. Horak,Su Chen Fan,Chen Jia,J. Faltermeier,Soon-Cheon Seo,Martin Burkhardt,Sean D. Burns,Scott Halle,S. Holmes,R. Johnson,Erin Mclellan,T. Levin,Yu Zhu,J. Kuss,A. Ebert,Jason E. Cummings,Donald F. Canaperi,S. Paparao,John C. Arnold,T. Sparks,Chiew-seng Koay,Thomas S. Kanarsky,Stefan Schmitz,Karen Petrillo,R. H. Kim,James J. Demarest,Lisa F. Edge,Hemanth Jagannathan,M. Smalley,N. Berliner,Kangguo Cheng,D. LaTulipe,Charles W. Koburger,Sanjay Mehta,M. Raymond,Matt Colburn,Terry A. Spooner,Vamsi Paruchuri,Wilfried Haensch,D. McHerron,Bruce B. Doris +46 more
TL;DR: In this article, a 0.1 mum2 6T-SRAM cell with high-NA immersion lithography and state-of-the-art 300 mm tooling is presented.