D
Delin Zhang
Researcher at University of Minnesota
Publications - 84
Citations - 1837
Delin Zhang is an academic researcher from University of Minnesota. The author has contributed to research in topics: Magnetization & Spintronics. The author has an hindex of 19, co-authored 71 publications receiving 1408 citations. Previous affiliations of Delin Zhang include University of Science and Technology Beijing & Max Planck Society.
Papers
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Room-temperature high spin-orbit torque due to quantum confinement in sputtered BixSe(1-x) films.
Mahendra Dc,Roberto Grassi,Junyang Chen,Mahdi Jamali,Danielle Reifsnyder Hickey,Delin Zhang,Zhengyang Zhao,Hongshi Li,Patrick Quarterman,Yang Lv,Mo Li,Aurelien Manchon,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang +14 more
TL;DR: Sputtered BixSe(1–x) thin films can generate very large current-induced spin–orbit torque, capable to switch both in-plane and out-of-plane magnetized CoFeB-based structures deposited on top, at room temperature.
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Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material
Mahendra Dc,Mahdi Jamali,Junyang Chen,Danielle Reifsnyder Hickey,Delin Zhang,Zhengyang Zhao,Hongshi Li,Patrick Quarterman,Yang Lv,Mo Li,K. Andre Mkhoyan,Jian-Ping Wang +11 more
TL;DR: In this article, the spin-orbit torque arising from magnetron-sputtered BixSe(1-x)/CoFeB heterostructures was investigated by using a dc planar Hall method.
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Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures.
TL;DR: In this paper, a two-terminal spin Hall magnetoresistance was observed in a topological insulator and a conventional ferromagnetic metal bilayer system at relatively higher temperature.
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Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology
Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang +6 more
TL;DR: Giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation is demonstrated and Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated.
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Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures
TL;DR: The authors report the large unidirectional spin Hall magnetoresistance in a topological insulator and ferromagnetic metal bilayer system at relatively higher temperature.