Didier Stiévenard

TL;DR: In this article, the authors describe information which has been obtained on point defects detected in various types of GaAs materials using electron paramagnetic resonance as well as electrical and optical techniques, concluding that native defects are not simple intrinsic defects, with the exception of the antisites, but complexes formed by the interaction of such defects between themselves or with impurities.

TL;DR: In this paper, a general model for the vapor-liquid-solid nanowire (NW) growth rates was presented, which accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as well as the Gibbs-Thomson effect of elevated chemical potential in the drop with a curved surface.

TL;DR: In this article, the authors explain quantitatively the variation of the oxide height with the polarization and the speed of the tip with a model based on field induced oxidation and estimate the thermal activation energy of the oxidation process.

TL;DR: It is concluded that EL2 is a complex formed by an isolated As-GaAs defect and an intrinsic interstitial defect, namely ${\mathrm{As}}_{\ mathrm{i}}$ or £1,000,000 or more, respectively.

TL;DR: In this paper, a comparison between scanning tunneling microscope (STM) and atomic force microscope (AFM) nanolithography techniques based on local oxidation of silicon is proposed.