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Wanghua Chen

Researcher at École Polytechnique

Publications -  57
Citations -  1112

Wanghua Chen is an academic researcher from École Polytechnique. The author has contributed to research in topics: Nanowire & Silicon. The author has an hindex of 16, co-authored 55 publications receiving 973 citations. Previous affiliations of Wanghua Chen include Institut national des sciences appliquées de Rouen & Centre national de la recherche scientifique.

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Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

TL;DR: In this paper, a general model for the vapor-liquid-solid nanowire (NW) growth rates was presented, which accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as well as the Gibbs-Thomson effect of elevated chemical potential in the drop with a curved surface.
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Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth

TL;DR: It is found that the concentration of metal impurities in crystalline silicon nanowires increases with the growth rate and can reach a level of two orders of magnitude higher than that in their equilibrium solubility.
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Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trapping

TL;DR: This work reports on the fabrication of both planar and patterned ultrathin c-Si solar cells on glass using low temperature, low-cost, and scalable techniques and reveals that the low photon escape probability of 25% is the key factor in the light trapping mechanism.
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A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells

TL;DR: In this paper, the authors focus on nanowires grown using the plasma-assisted vapour liquid solid method because of the simplicity and compatibility with current silicon thin-film technology, which has already resulted in ∼8% of stable devices with an absorber layer thickness of only 100nm.