R
Rodrigue Lardé
Researcher at Centre national de la recherche scientifique
Publications - 51
Citations - 1127
Rodrigue Lardé is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Atom probe & Silicon. The author has an hindex of 18, co-authored 51 publications receiving 1046 citations. Previous affiliations of Rodrigue Lardé include University of Rouen & Institut national des sciences appliquées de Rouen.
Papers
More filters
Journal ArticleDOI
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
Vladimir G. Dubrovskii,N. V. Sibirev,G. E. Cirlin,I. P. Soshnikov,Wanghua Chen,Rodrigue Lardé,Emmanuel Cadel,Philippe Pareige,Tao Xu,Bruno Grandidier,J. P. Nys,Didier Stiévenard,M. Moewe,L.C. Chuang,Connie J. Chang-Hasnain +14 more
TL;DR: In this paper, a general model for the vapor-liquid-solid nanowire (NW) growth rates was presented, which accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as well as the Gibbs-Thomson effect of elevated chemical potential in the drop with a curved surface.
Journal ArticleDOI
Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field
Lorenzo Mancini,Nooshin Amirifar,Deodatta Shinde,Ivan Blum,Matthieu Gilbert,Angela Vella,François Vurpillot,Williams Lefebvre,Rodrigue Lardé,Etienne Talbot,Philippe Pareige,Xavier Portier,Ahmed Ziani,Christian Davesnne,Christophe Durand,Joël Eymery,Raphaël Butté,Jean-François Carlin,Nicolas Grandjean,Lorenzo Rigutti +19 more
TL;DR: In this article, a systematic analysis of the composition measurement of III-N binary (AlN, GaN) and ternary compounds (InGaN, InAlN), MgO, and ZnO) by laser-assisted tomographic atom probe as a function of laser power and applied DC bias is presented.
Journal ArticleDOI
Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors
TL;DR: In this article, a depth profiling resolution of 0.9 nm was achieved for boron delta layers by tomographic atom probe (3DAP) and the steepness was found to be below 1 nm/decade.
Journal ArticleDOI
Evidence of superparamagnetic co clusters in pulsed laser deposition-grown Zn0.9Co0.1O thin films using atom probe tomography.
Rodrigue Lardé,Etienne Talbot,Philippe Pareige,H. Bieber,Guy Schmerber,Silviu Colis,Veronique Pierron-Bohnes,Aziz Dinia +7 more
TL;DR: These analyses provide strong evidence that the room-temperature ferromagnetism observed in the magnetization curves cannot be attributed to the observed Co clusters, and reinforce the assumption of a defect-induced ferromagnetic relaxation in Co-doped ZnO diluted magnetic semiconductors.
Journal ArticleDOI
Si nanoparticles in SiO2 An atomic scale observation for optimization of optical devices
TL;DR: In this article, the three-dimensional imaging of silicon nanoclusters array in silicon-rich silicon oxide layers was evidenced and studied, and the atom probe tomography technique allowed to give the composition of the nan-clusters and their interface with the silica matrix, giving new insights for the understanding of the properties of Si-based photonic devices.